Enhanced substrates and GaN pilot lines enabling compact power applications

Risultati finali

8.2.1.2 Final Report on Dissemination Activities

Final Report on Dissemination Activities

D8.2.1.2 First Report on Dissemination Activities

First Report on Dissemination Activities

D8.1.3.1 Press Release: Launching the PowerBase Project

Press Release: Launching the PowerBase Project

D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site

Initial Dissemination Plan and Set-up PowerBase Web-Site

8.2.5.2 Organization of a workshop/training event

Organization of a workshop/training event

D8.2.5.1 Preparation of e-learning “Power electronics” module;

Preparation of e-learning “Power electronics” module;

Pubblicazioni

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Autori: Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Pubblicato in: IEEE Transactions on Electron Devices, Numero 64/9, 2017, Pagina/e 3616-3621, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2726440

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Autori: I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
Pubblicato in: Microelectronics Reliability, Numero 76-77, 2017, Pagina/e 298-303, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2017.06.061

Dislocation formation in heavily As-doped Czochralski grown silicon

Autori: L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich
Pubblicato in: Crystal Research and Technology, Numero 52/8, 2017, Pagina/e 1600373, ISSN 0232-1300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/crat.201600373

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Autori: L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich
Pubblicato in: Journal of Crystal Growth, Numero 491, 2018, Pagina/e 57-65, ISSN 0022-0248
Editore: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.03.028

Exploring the thermal limit of GaN power devices under extreme overload conditions

Autori: F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Pubblicato in: Microelectronics Reliability, Numero 76-77, 2017, Pagina/e 304-308, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2017.07.046

Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties

Autori: L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov
Pubblicato in: Physical Review B, Numero 95/19, 2017, Pagina/e 1-11, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.95.195314

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Autori: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Pubblicato in: Microelectronics Reliability, Numero 78, 2017, Pagina/e 148-155, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2017.08.012

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Autori: Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/5, 2018, Pagina/e 1838-1842, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2813542

The 2018 GaN power electronics roadmap

Autori: H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng J
Pubblicato in: Journal of Physics D: Applied Physics, Numero 51/16, 2018, Pagina/e 163001, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aaaf9d

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autori: Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere
Pubblicato in: IEEE Electron Device Letters, 2017, Pagina/e 1-1, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2703304

QDB: a new database of plasma chemistries and reactions

Autori: Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nig
Pubblicato in: Plasma Sources Science and Technology, Numero 26/5, 2017, Pagina/e 055014, ISSN 1361-6595
Editore: IOP Publishing Ltd
DOI: 10.1088/1361-6595/aa6669

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

Autori: Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval
Pubblicato in: IEEE Transactions on Electron Devices, Numero 64/1, 2017, Pagina/e 333-336, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2629024

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Autori: Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Pubblicato in: IEEE Transactions on Electron Devices, Numero 63/9, 2016, Pagina/e 3451-3458, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2587103

Gate Stability of GaN-Based HEMTs with P-Type Gate

Autori: Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Pubblicato in: Electronics, Numero 5/2, 2016, Pagina/e 14, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics5020014

Combined experi-mental and numerical approach to study electromechanical resonant phenomena in GaN-on-Si heterostructures

Autori: F.P. Pribahsnik, M. Bernardoni, M. Nelhiebel, M. Mataln, A. Lindemann
Pubblicato in: Proceedings ESREF 2018, 2018, ISSN 0026-2714
Editore: Elsevier Ltd.

Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology

Autori: M.Lenzhofer, A. Frank
Pubblicato in: IEEE- PEMC 2018, 2018
Editore: IEEE

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Autori: S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere
Pubblicato in: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018, 2018
Editore: IMT Bucharest

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Autori: N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere
Pubblicato in: The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD), 2018
Editore: IEEE

MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Autori: Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere
Pubblicato in: ICNS-12, 2017
Editore: ICNS-12

GaN Device architectures enabled by next generation substrates

Autori: S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere
Pubblicato in: GaN Marathon 2.0, 2018
Editore: University of Padova

Substrate optimization for high reliability GaN devices

Autori: S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere
Pubblicato in: MRS2018 Symposium, 2018
Editore: Cambridge University Press

Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

Autori: Ander Avila, Asier Garcia-Bediaga, Oier Onederra, Alejandro Ruias, Alberto Rodriguez
Pubblicato in: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, Pagina/e P.1-P.9, ISBN 978-90-75815-27-6
Editore: IEEE
DOI: 10.23919/EPE17ECCEEurope.2017.8099334

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Autori: Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni
Pubblicato in: 2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, Pagina/e 35-40, ISBN 978-1-5090-4193-0
Editore: IEEE
DOI: 10.1109/IIRW.2016.7904896

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Autori: Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas
Pubblicato in: Energy Conversion Congress and Exposition, 2018
Editore: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autori: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Pubblicato in: 20th European Conference on Power Electronics and Applications, 2018
Editore: European Power Electronics Association

Thermal performance analysis of GaN-based high-power converters

Autori: Ander Avila, Xavier Perpiña, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas
Pubblicato in: European Conference on Power Electronics and Applications, 2018
Editore: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autori: Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier Perpiña, Miquel Vellvehi
Pubblicato in: European Conference on Power Electronics and Applications, 2018
Editore: IEEE

Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

Autori: PRIESOL, Juraj - ŠATKA, Alexander - VISALLI, D. - DERLUYN, J. - ZHAO, M. - STOFFELS, Steve
Pubblicato in: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Editore: University of Žilina

Advanced power electronics in e-learning

Autori: MAREK, Juraj - CHVÁLA, Aleš - BENKO, Peter - SZOBOLOVSZKÝ, Robert - KOVÁČ, Jaroslav jr. - STUCHLÍKOVÁ, Ľubica
Pubblicato in: Distance learning, simulation and communication 2017, 2017, ISBN 978-80-7231-415-7
Editore: University of Defence, Brno

Modern P-Gan Power HEMT Devices Under UIS Conditions

Autori: Juraj Marek, Alexander Šatka, Martin Jagelka, Aleš Chvála, Patrik Príbytný, Martin Donoval and Daniel Donoval
Pubblicato in: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Editore: University of Žilina

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Autori: CHVÁLA, Aleš - MAREK, Juraj - PRÍBYTNÝ, Patrik - ŠATKA, Alexander - DONOVAL, Daniel - STOFFELS, Steve - POSTHUMA, Niels - DECOUTERE, Stefaan
Pubblicato in: SISPAD 2017 - International conference on simulation of semiconductor processes and devices., 2017, ISBN 978-4-86348-612-6
Editore: IEEE

Point defects and impurities in mon-crystalline silicon - some recent advances

Autori: N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson
Pubblicato in: The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016), 2016
Editore: The Japan Society for the Promotion of Science

Study of the stability of GaN-HEMTs with p-type Gate under Forward Gate Bias

Autori: Ruzzarin M. et al.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

On Wafer Application Testing for 600 V E mode GaN HEMTs in Boost Regime

Autori: Barbato A. et al.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Challenges towards highly reliabile GaN power transistors

Autori: Meneghini M. et al.
Pubblicato in: GaN Marathon 2018, 2018
Editore: Cleup sc

Analysis of the Drain-to-Substrate Leakage of Power HEMTs Grown on Highly Resistive Silicon Substrate

Autori: Borga M. et al.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Effect of surface reconstruction and rehybridization on the compositional limits of III-Nitride ternary alloys

Autori: L. Lymperakis and J. Neugebauer
Pubblicato in: GaN Marathon 2.0, April 18-19, 2018, Padova (Italy) –, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards

Autori: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Pubblicato in: GaN Marathon 2.0, 2018
Editore: Cleup sc

Performance Analysis of GaN Devices in Compact Power Applications

Autori: A. Garcia-Bediaga, O.R. Schmidt, J. Herrero, J. Danzberger, and H. Pairitsch
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

GaN Devices and Transformer Design in High Frequency Power Applications

Autori: J. Herrero, J. Milla, D. Antolín.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

3-D Device Electrothermal Simulation for Analysis of Multifinger Power HEMTs

Autori: Aleš Chvála, Juraj Marek, Alexander Šatka, Juraj Priesol, Patrik Príbytný, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval,
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Degradation of p-GaN HEMTs exposed to clamped inductive switching

Autori: Juraj Marek, Martin Jagelka, Jozef Kozárik, Aleš Chvála, Patrik Príbytný, Alexander Šatka, Martin Donoval, Daniel Donoval and Ľubica Stuchlíková
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Modern p-GaN power devices under UIS conditions

Autori: J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics

Autori: S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Strain analysis and dicing defects of GaN on Si substrates

Autori: D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study

Autori: L. Lymperakis and J. Neugebauer
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Next generation 200mm substrates for GaN power devices

Autori: S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

QDB: Validated Plasma Chemistries Database

Autori: Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
Pubblicato in: 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, 2016
Editore: na

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autori: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Pubblicato in: The International Conference on Crystal Growth and Epitaxy -ICCGE-18, 2016
Editore: na

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autori: X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA, Spain

High temperature failure mode in power GaN devices

Autori: F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors

Autori: K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Autori: S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna
Pubblicato in: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Pagina/e 4B-4.1-4B-4.9, ISBN 978-1-5090-6641-4
Editore: IEEE
DOI: 10.1109/IRPS.2017.7936310

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autori: J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
Pubblicato in: 10th International Conference of Polish Society for Crystal Growth - ICPSCG10, 2016
Editore: na

Processes behind Suppressed Current Collapse Buffer Architectures

Autori: Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
Pubblicato in: The International Workshop on Nitride Semiconductors 2016, 2016
Editore: na

Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

Autori: J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
Pubblicato in: Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method, 2017
Editore: IUMA

QDB: A new database of plasma chemistries and reactions – concept and exemplar verification

Autori: A. Dzarasova
Pubblicato in: IOP Plasma physics conference, 2016
Editore: IOP publishing

UIS Capability of Modern GaN Power Devices

Autori: J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
Pubblicato in: 3rd international conference on advances in electronic and photonic technologies, 2016
Editore: na

Application Related Reliability Test Concept for GaN HEMT Power Devices

Autori: M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications

Autori: Jonathan Tennyson, Christian Hill, Sara Rahimi
Pubblicato in: International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, 2016
Editore: na

Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System

Autori: M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs

Autori: M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Impact of repetitive UIS on modern GaN power devices

Autori: Juraj Marek, Lubica Stuchlikova, Martin Jagelka, Ales Chvala, Patrik Pribytny, Martin Donoval, Daniel Donoval
Pubblicato in: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, Pagina/e 173-176, ISBN 978-1-5090-3083-5
Editore: IEEE
DOI: 10.1109/ASDAM.2016.7805923

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Autori: Matteo Meneghini, Isabella Rossetto, Matteo Borga, Eleonora Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Stefaan Decoutere
Pubblicato in: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Pagina/e 4B-5.1-4B-5.5, ISBN 978-1-5090-6641-4
Editore: IEEE
DOI: 10.1109/IRPS.2017.7936311

Guardbanding Techniques for the Semiconductor Industry: A Comparative Study

Autori: Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
Pubblicato in: The Joint Statistical Meeting – JSM2016, 2016
Editore: American Statistical Association

Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)

Autori: Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
Pubblicato in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Editore: na

Constructing self-consistent validated plasma chemistry

Autori: S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
Pubblicato in: The 38th International Symposium on Dry Process (DPS2016), 2016
Editore: na

Guardbanding based on Device Drift Behavior

Autori: Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
Pubblicato in: Nineteenth Annual Automotive Electronics Reliability Workshop, 2017
Editore: na

Exposed die wafer level encapsulation by transfer molding

Autori: S.H.M. Kersjes, J.L.J. Zijl, W.G.J. Gal, H.A.M. Fierkens, H. Wensink
Pubblicato in: 2016 6th Electronic System-Integration Technology Conference (ESTC), 2016, Pagina/e 1-4, ISBN 978-1-5090-1402-6
Editore: IEEE
DOI: 10.1109/ESTC.2016.7764480

Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations

Autori: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
Pubblicato in: International MOS-AK Workshop, 2016
Editore: International MOS-AK Workshop

MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)

Autori: Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
Pubblicato in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Editore: na

A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions

Autori: A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Linking reactor-scale plasma modelling with feature-scale profile

Autori: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Pubblicato in: Dry Process Symposium, 2015
Editore: Dry Process Symposium

From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations

Autori: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Pubblicato in: American Vacuum Society Symopsium, 2015
Editore: American Vacuum Society

Determination of guard bands for quality characteristics using copula-based models for longitudinal data

Autori: Hofer V., Leitner J., Nowak T
Pubblicato in: The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016, 2016
Editore: The German Consortium in Statistics

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autori: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Pubblicato in: 1st German Czechoslovak Conference on Crystal Growth, 2016
Editore: Fraunhofer Institute of Integrated Systems and Device Technology IISB

GaN specific mechanical phenomena and their influence on reliability in power HEMT operation

Autori: F.P. Pribahsnik
Pubblicato in: PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke Universität Magdeburg, 2018
Editore: Otto v Guericke Universität Magdeburg

First time demonstration of fully isolated GaN power devices using SOI technology

Autori: Karen Geens
Pubblicato in: imec magazine, 2017
Editore: imec

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Schaltkreis, Halbleiterbauelement und Verfahren

Numero candidatura/pubblicazione: US 7868353
Data: 2015-10-13

Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zurHerstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinemSilizium

Numero candidatura/pubblicazione: DE 102016209008
Data: 2016-05-24
Candidato/i: SILTRONIC AG

SEMICONDUCTOR WAFER AND METHOD

Numero candidatura/pubblicazione: US 20170186600A1
Data: 2015-12-24

GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE

Numero candidatura/pubblicazione: EP 17159548
Data: 2017-03-07

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