Enhanced substrates and GaN pilot lines enabling compact power applications

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

8.2.1.2 Final Report on Dissemination Activities

Final Report on Dissemination Activities

D8.2.1.2 First Report on Dissemination Activities

First Report on Dissemination Activities

D8.1.3.1 Press Release: Launching the PowerBase Project

Press Release: Launching the PowerBase Project

D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site

Initial Dissemination Plan and Set-up PowerBase Web-Site

8.2.5.2 Organization of a workshop/training event

Organization of a workshop/training event

D8.2.5.1 Preparation of e-learning “Power electronics” module;

Preparation of e-learning “Power electronics” module;

Pubblicazioni

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Autori: Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Pubblicato in: IEEE Transactions on Electron Devices, Numero 64/9, 2017, Pagina/e 3616-3621, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2726440

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Autori: I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
Pubblicato in: Microelectronics Reliability, Numero 76-77, 2017, Pagina/e 298-303, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2017.06.061

Dislocation formation in heavily As-doped Czochralski grown silicon

Autori: L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich
Pubblicato in: Crystal Research and Technology, Numero 52/8, 2017, Pagina/e 1600373, ISSN 0232-1300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/crat.201600373

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Autori: L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich
Pubblicato in: Journal of Crystal Growth, Numero 491, 2018, Pagina/e 57-65, ISSN 0022-0248
Editore: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.03.028

Exploring the thermal limit of GaN power devices under extreme overload conditions

Autori: F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Pubblicato in: Microelectronics Reliability, Numero 76-77, 2017, Pagina/e 304-308, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2017.07.046

Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties

Autori: L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov
Pubblicato in: Physical Review B, Numero 95/19, 2017, Pagina/e 1-11, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.95.195314

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Autori: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Pubblicato in: Microelectronics Reliability, Numero 78, 2017, Pagina/e 148-155, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2017.08.012

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Autori: Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/5, 2018, Pagina/e 1838-1842, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2813542

The 2018 GaN power electronics roadmap

Autori: H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng J
Pubblicato in: Journal of Physics D: Applied Physics, Numero 51/16, 2018, Pagina/e 163001, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aaaf9d

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autori: Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere
Pubblicato in: IEEE Electron Device Letters, 2017, Pagina/e 1-1, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2703304

QDB: a new database of plasma chemistries and reactions

Autori: Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nig
Pubblicato in: Plasma Sources Science and Technology, Numero 26/5, 2017, Pagina/e 055014, ISSN 1361-6595
Editore: IOP Publishing Ltd
DOI: 10.1088/1361-6595/aa6669

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

Autori: Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval
Pubblicato in: IEEE Transactions on Electron Devices, Numero 64/1, 2017, Pagina/e 333-336, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2629024

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Autori: Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Pubblicato in: IEEE Transactions on Electron Devices, Numero 63/9, 2016, Pagina/e 3451-3458, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2587103

Gate Stability of GaN-Based HEMTs with P-Type Gate

Autori: Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Pubblicato in: Electronics, Numero 5/2, 2016, Pagina/e 14, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics5020014

Combined experi-mental and numerical approach to study electromechanical resonant phenomena in GaN-on-Si heterostructures

Autori: F.P. Pribahsnik, M. Bernardoni, M. Nelhiebel, M. Mataln, A. Lindemann
Pubblicato in: Proceedings ESREF 2018, 2018, ISSN 0026-2714
Editore: Elsevier Ltd.

Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology

Autori: M.Lenzhofer, A. Frank
Pubblicato in: IEEE- PEMC 2018, 2018
Editore: IEEE

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Autori: S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere
Pubblicato in: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018, 2018
Editore: IMT Bucharest

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Autori: N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere
Pubblicato in: The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD), 2018
Editore: IEEE

MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Autori: Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere
Pubblicato in: ICNS-12, 2017
Editore: ICNS-12

GaN Device architectures enabled by next generation substrates

Autori: S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere
Pubblicato in: GaN Marathon 2.0, 2018
Editore: University of Padova

Substrate optimization for high reliability GaN devices

Autori: S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere
Pubblicato in: MRS2018 Symposium, 2018
Editore: Cambridge University Press

Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

Autori: Ander Avila, Asier Garcia-Bediaga, Oier Onederra, Alejandro Ruias, Alberto Rodriguez
Pubblicato in: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, Pagina/e P.1-P.9, ISBN 978-90-75815-27-6
Editore: IEEE
DOI: 10.23919/EPE17ECCEEurope.2017.8099334

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Autori: Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni
Pubblicato in: 2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, Pagina/e 35-40, ISBN 978-1-5090-4193-0
Editore: IEEE
DOI: 10.1109/IIRW.2016.7904896

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Autori: Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas
Pubblicato in: Energy Conversion Congress and Exposition, 2018
Editore: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autori: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Pubblicato in: 20th European Conference on Power Electronics and Applications, 2018
Editore: European Power Electronics Association

Thermal performance analysis of GaN-based high-power converters

Autori: Ander Avila, Xavier Perpiña, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas
Pubblicato in: European Conference on Power Electronics and Applications, 2018
Editore: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autori: Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier Perpiña, Miquel Vellvehi
Pubblicato in: European Conference on Power Electronics and Applications, 2018
Editore: IEEE

Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

Autori: PRIESOL, Juraj - ŠATKA, Alexander - VISALLI, D. - DERLUYN, J. - ZHAO, M. - STOFFELS, Steve
Pubblicato in: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Editore: University of Žilina

Advanced power electronics in e-learning

Autori: MAREK, Juraj - CHVÁLA, Aleš - BENKO, Peter - SZOBOLOVSZKÝ, Robert - KOVÁČ, Jaroslav jr. - STUCHLÍKOVÁ, Ľubica
Pubblicato in: Distance learning, simulation and communication 2017, 2017, ISBN 978-80-7231-415-7
Editore: University of Defence, Brno

Modern P-Gan Power HEMT Devices Under UIS Conditions

Autori: Juraj Marek, Alexander Šatka, Martin Jagelka, Aleš Chvála, Patrik Príbytný, Martin Donoval and Daniel Donoval
Pubblicato in: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Editore: University of Žilina

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Autori: CHVÁLA, Aleš - MAREK, Juraj - PRÍBYTNÝ, Patrik - ŠATKA, Alexander - DONOVAL, Daniel - STOFFELS, Steve - POSTHUMA, Niels - DECOUTERE, Stefaan
Pubblicato in: SISPAD 2017 - International conference on simulation of semiconductor processes and devices., 2017, ISBN 978-4-86348-612-6
Editore: IEEE

Point defects and impurities in mon-crystalline silicon - some recent advances

Autori: N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson
Pubblicato in: The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016), 2016
Editore: The Japan Society for the Promotion of Science

Study of the stability of GaN-HEMTs with p-type Gate under Forward Gate Bias

Autori: Ruzzarin M. et al.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

On Wafer Application Testing for 600 V E mode GaN HEMTs in Boost Regime

Autori: Barbato A. et al.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Challenges towards highly reliabile GaN power transistors

Autori: Meneghini M. et al.
Pubblicato in: GaN Marathon 2018, 2018
Editore: Cleup sc

Analysis of the Drain-to-Substrate Leakage of Power HEMTs Grown on Highly Resistive Silicon Substrate

Autori: Borga M. et al.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Effect of surface reconstruction and rehybridization on the compositional limits of III-Nitride ternary alloys

Autori: L. Lymperakis and J. Neugebauer
Pubblicato in: GaN Marathon 2.0, April 18-19, 2018, Padova (Italy) –, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards

Autori: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Pubblicato in: GaN Marathon 2.0, 2018
Editore: Cleup sc

Performance Analysis of GaN Devices in Compact Power Applications

Autori: A. Garcia-Bediaga, O.R. Schmidt, J. Herrero, J. Danzberger, and H. Pairitsch
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

GaN Devices and Transformer Design in High Frequency Power Applications

Autori: J. Herrero, J. Milla, D. Antolín.
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

3-D Device Electrothermal Simulation for Analysis of Multifinger Power HEMTs

Autori: Aleš Chvála, Juraj Marek, Alexander Šatka, Juraj Priesol, Patrik Príbytný, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval,
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Degradation of p-GaN HEMTs exposed to clamped inductive switching

Autori: Juraj Marek, Martin Jagelka, Jozef Kozárik, Aleš Chvála, Patrik Príbytný, Alexander Šatka, Martin Donoval, Daniel Donoval and Ľubica Stuchlíková
Pubblicato in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Editore: Cleup sc

Modern p-GaN power devices under UIS conditions

Autori: J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics

Autori: S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Strain analysis and dicing defects of GaN on Si substrates

Autori: D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study

Autori: L. Lymperakis and J. Neugebauer
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Next generation 200mm substrates for GaN power devices

Autori: S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

QDB: Validated Plasma Chemistries Database

Autori: Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
Pubblicato in: 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, 2016
Editore: na

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autori: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Pubblicato in: The International Conference on Crystal Growth and Epitaxy -ICCGE-18, 2016
Editore: na

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autori: X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA, Spain

High temperature failure mode in power GaN devices

Autori: F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors

Autori: K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Autori: S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna
Pubblicato in: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Pagina/e 4B-4.1-4B-4.9, ISBN 978-1-5090-6641-4
Editore: IEEE
DOI: 10.1109/IRPS.2017.7936310

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autori: J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
Pubblicato in: 10th International Conference of Polish Society for Crystal Growth - ICPSCG10, 2016
Editore: na

Processes behind Suppressed Current Collapse Buffer Architectures

Autori: Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
Pubblicato in: The International Workshop on Nitride Semiconductors 2016, 2016
Editore: na

Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

Autori: J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
Pubblicato in: Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method, 2017
Editore: IUMA

QDB: A new database of plasma chemistries and reactions – concept and exemplar verification

Autori: A. Dzarasova
Pubblicato in: IOP Plasma physics conference, 2016
Editore: IOP publishing

UIS Capability of Modern GaN Power Devices

Autori: J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
Pubblicato in: 3rd international conference on advances in electronic and photonic technologies, 2016
Editore: na

Application Related Reliability Test Concept for GaN HEMT Power Devices

Autori: M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications

Autori: Jonathan Tennyson, Christian Hill, Sara Rahimi
Pubblicato in: International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, 2016
Editore: na

Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System

Autori: M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs

Autori: M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Impact of repetitive UIS on modern GaN power devices

Autori: Juraj Marek, Lubica Stuchlikova, Martin Jagelka, Ales Chvala, Patrik Pribytny, Martin Donoval, Daniel Donoval
Pubblicato in: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, Pagina/e 173-176, ISBN 978-1-5090-3083-5
Editore: IEEE
DOI: 10.1109/ASDAM.2016.7805923

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Autori: Matteo Meneghini, Isabella Rossetto, Matteo Borga, Eleonora Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Stefaan Decoutere
Pubblicato in: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Pagina/e 4B-5.1-4B-5.5, ISBN 978-1-5090-6641-4
Editore: IEEE
DOI: 10.1109/IRPS.2017.7936311

Guardbanding Techniques for the Semiconductor Industry: A Comparative Study

Autori: Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
Pubblicato in: The Joint Statistical Meeting – JSM2016, 2016
Editore: American Statistical Association

Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)

Autori: Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
Pubblicato in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Editore: na

Constructing self-consistent validated plasma chemistry

Autori: S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
Pubblicato in: The 38th International Symposium on Dry Process (DPS2016), 2016
Editore: na

Guardbanding based on Device Drift Behavior

Autori: Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
Pubblicato in: Nineteenth Annual Automotive Electronics Reliability Workshop, 2017
Editore: na

Exposed die wafer level encapsulation by transfer molding

Autori: S.H.M. Kersjes, J.L.J. Zijl, W.G.J. Gal, H.A.M. Fierkens, H. Wensink
Pubblicato in: 2016 6th Electronic System-Integration Technology Conference (ESTC), 2016, Pagina/e 1-4, ISBN 978-1-5090-1402-6
Editore: IEEE
DOI: 10.1109/ESTC.2016.7764480

Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations

Autori: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
Pubblicato in: International MOS-AK Workshop, 2016
Editore: International MOS-AK Workshop

MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)

Autori: Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
Pubblicato in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Editore: na

A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions

Autori: A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
Pubblicato in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Editore: IUMA

Linking reactor-scale plasma modelling with feature-scale profile

Autori: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Pubblicato in: Dry Process Symposium, 2015
Editore: Dry Process Symposium

From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations

Autori: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Pubblicato in: American Vacuum Society Symopsium, 2015
Editore: American Vacuum Society

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Pubblicato in: 1st German Czechoslovak Conference on Crystal Growth, 2016
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Pubblicato in: PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke Universität Magdeburg, 2018
Editore: Otto v Guericke Universität Magdeburg

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Pubblicato in: imec magazine, 2017
Editore: imec

Diritti di proprietà intellettuale

Schaltkreis, Halbleiterbauelement und Verfahren

Numero candidatura/pubblicazione: US 7868353
Data: 2015-10-13

Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zurHerstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinemSilizium

Numero candidatura/pubblicazione: DE 102016209008
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Numero candidatura/pubblicazione: US 20170186600A1
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Data: 2017-03-07

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