Enhanced substrates and GaN pilot lines enabling compact power applications

Rezultaty

8.2.1.2 Final Report on Dissemination Activities

Final Report on Dissemination Activities

D8.2.1.2 First Report on Dissemination Activities

First Report on Dissemination Activities

D8.1.3.1 Press Release: Launching the PowerBase Project

Press Release: Launching the PowerBase Project

D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site

Initial Dissemination Plan and Set-up PowerBase Web-Site

8.2.5.2 Organization of a workshop/training event

Organization of a workshop/training event

D8.2.5.1 Preparation of e-learning “Power electronics” module;

Preparation of e-learning “Power electronics” module;

Publikacje

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Autorzy: Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Opublikowane w: IEEE Transactions on Electron Devices, Numer 64/9, 2017, Strona(/y) 3616-3621, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2726440

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Autorzy: I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
Opublikowane w: Microelectronics Reliability, Numer 76-77, 2017, Strona(/y) 298-303, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2017.06.061

Dislocation formation in heavily As-doped Czochralski grown silicon

Autorzy: L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich
Opublikowane w: Crystal Research and Technology, Numer 52/8, 2017, Strona(/y) 1600373, ISSN 0232-1300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/crat.201600373

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Autorzy: L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich
Opublikowane w: Journal of Crystal Growth, Numer 491, 2018, Strona(/y) 57-65, ISSN 0022-0248
Wydawca: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.03.028

Exploring the thermal limit of GaN power devices under extreme overload conditions

Autorzy: F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Opublikowane w: Microelectronics Reliability, Numer 76-77, 2017, Strona(/y) 304-308, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2017.07.046

Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties

Autorzy: L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov
Opublikowane w: Physical Review B, Numer 95/19, 2017, Strona(/y) 1-11, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.95.195314

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Autorzy: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Opublikowane w: Microelectronics Reliability, Numer 78, 2017, Strona(/y) 148-155, ISSN 0026-2714
Wydawca: Elsevier BV
DOI: 10.1016/j.microrel.2017.08.012

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Autorzy: Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/5, 2018, Strona(/y) 1838-1842, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2813542

The 2018 GaN power electronics roadmap

Autorzy: H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng J
Opublikowane w: Journal of Physics D: Applied Physics, Numer 51/16, 2018, Strona(/y) 163001, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aaaf9d

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autorzy: Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere
Opublikowane w: IEEE Electron Device Letters, 2017, Strona(/y) 1-1, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2703304

QDB: a new database of plasma chemistries and reactions

Autorzy: Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nig
Opublikowane w: Plasma Sources Science and Technology, Numer 26/5, 2017, Strona(/y) 055014, ISSN 1361-6595
Wydawca: IOP Publishing Ltd
DOI: 10.1088/1361-6595/aa6669

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

Autorzy: Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval
Opublikowane w: IEEE Transactions on Electron Devices, Numer 64/1, 2017, Strona(/y) 333-336, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2629024

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Autorzy: Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Opublikowane w: IEEE Transactions on Electron Devices, Numer 63/9, 2016, Strona(/y) 3451-3458, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2587103

Gate Stability of GaN-Based HEMTs with P-Type Gate

Autorzy: Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Opublikowane w: Electronics, Numer 5/2, 2016, Strona(/y) 14, ISSN 2079-9292
Wydawca: MDPI
DOI: 10.3390/electronics5020014

Combined experi-mental and numerical approach to study electromechanical resonant phenomena in GaN-on-Si heterostructures

Autorzy: F.P. Pribahsnik, M. Bernardoni, M. Nelhiebel, M. Mataln, A. Lindemann
Opublikowane w: Proceedings ESREF 2018, 2018, ISSN 0026-2714
Wydawca: Elsevier Ltd.

Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology

Autorzy: M.Lenzhofer, A. Frank
Opublikowane w: IEEE- PEMC 2018, 2018
Wydawca: IEEE

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Autorzy: S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere
Opublikowane w: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018, 2018
Wydawca: IMT Bucharest

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Autorzy: N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere
Opublikowane w: The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD), 2018
Wydawca: IEEE

MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Autorzy: Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere
Opublikowane w: ICNS-12, 2017
Wydawca: ICNS-12

GaN Device architectures enabled by next generation substrates

Autorzy: S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere
Opublikowane w: GaN Marathon 2.0, 2018
Wydawca: University of Padova

Substrate optimization for high reliability GaN devices

Autorzy: S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere
Opublikowane w: MRS2018 Symposium, 2018
Wydawca: Cambridge University Press

Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

Autorzy: Ander Avila, Asier Garcia-Bediaga, Oier Onederra, Alejandro Ruias, Alberto Rodriguez
Opublikowane w: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, Strona(/y) P.1-P.9, ISBN 978-90-75815-27-6
Wydawca: IEEE
DOI: 10.23919/EPE17ECCEEurope.2017.8099334

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Autorzy: Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni
Opublikowane w: 2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, Strona(/y) 35-40, ISBN 978-1-5090-4193-0
Wydawca: IEEE
DOI: 10.1109/IIRW.2016.7904896

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Autorzy: Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas
Opublikowane w: Energy Conversion Congress and Exposition, 2018
Wydawca: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autorzy: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Opublikowane w: 20th European Conference on Power Electronics and Applications, 2018
Wydawca: European Power Electronics Association

Thermal performance analysis of GaN-based high-power converters

Autorzy: Ander Avila, Xavier Perpiña, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas
Opublikowane w: European Conference on Power Electronics and Applications, 2018
Wydawca: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Autorzy: Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier Perpiña, Miquel Vellvehi
Opublikowane w: European Conference on Power Electronics and Applications, 2018
Wydawca: IEEE

Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

Autorzy: PRIESOL, Juraj - ŠATKA, Alexander - VISALLI, D. - DERLUYN, J. - ZHAO, M. - STOFFELS, Steve
Opublikowane w: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Wydawca: University of Žilina

Advanced power electronics in e-learning

Autorzy: MAREK, Juraj - CHVÁLA, Aleš - BENKO, Peter - SZOBOLOVSZKÝ, Robert - KOVÁČ, Jaroslav jr. - STUCHLÍKOVÁ, Ľubica
Opublikowane w: Distance learning, simulation and communication 2017, 2017, ISBN 978-80-7231-415-7
Wydawca: University of Defence, Brno

Modern P-Gan Power HEMT Devices Under UIS Conditions

Autorzy: Juraj Marek, Alexander Šatka, Martin Jagelka, Aleš Chvála, Patrik Príbytný, Martin Donoval and Daniel Donoval
Opublikowane w: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Wydawca: University of Žilina

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Autorzy: CHVÁLA, Aleš - MAREK, Juraj - PRÍBYTNÝ, Patrik - ŠATKA, Alexander - DONOVAL, Daniel - STOFFELS, Steve - POSTHUMA, Niels - DECOUTERE, Stefaan
Opublikowane w: SISPAD 2017 - International conference on simulation of semiconductor processes and devices., 2017, ISBN 978-4-86348-612-6
Wydawca: IEEE

Point defects and impurities in mon-crystalline silicon - some recent advances

Autorzy: N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson
Opublikowane w: The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016), 2016
Wydawca: The Japan Society for the Promotion of Science

Study of the stability of GaN-HEMTs with p-type Gate under Forward Gate Bias

Autorzy: Ruzzarin M. et al.
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

On Wafer Application Testing for 600 V E mode GaN HEMTs in Boost Regime

Autorzy: Barbato A. et al.
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

Challenges towards highly reliabile GaN power transistors

Autorzy: Meneghini M. et al.
Opublikowane w: GaN Marathon 2018, 2018
Wydawca: Cleup sc

Analysis of the Drain-to-Substrate Leakage of Power HEMTs Grown on Highly Resistive Silicon Substrate

Autorzy: Borga M. et al.
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

Effect of surface reconstruction and rehybridization on the compositional limits of III-Nitride ternary alloys

Autorzy: L. Lymperakis and J. Neugebauer
Opublikowane w: GaN Marathon 2.0, April 18-19, 2018, Padova (Italy) –, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards

Autorzy: X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Opublikowane w: GaN Marathon 2.0, 2018
Wydawca: Cleup sc

Performance Analysis of GaN Devices in Compact Power Applications

Autorzy: A. Garcia-Bediaga, O.R. Schmidt, J. Herrero, J. Danzberger, and H. Pairitsch
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

GaN Devices and Transformer Design in High Frequency Power Applications

Autorzy: J. Herrero, J. Milla, D. Antolín.
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

3-D Device Electrothermal Simulation for Analysis of Multifinger Power HEMTs

Autorzy: Aleš Chvála, Juraj Marek, Alexander Šatka, Juraj Priesol, Patrik Príbytný, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval,
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

Degradation of p-GaN HEMTs exposed to clamped inductive switching

Autorzy: Juraj Marek, Martin Jagelka, Jozef Kozárik, Aleš Chvála, Patrik Príbytný, Alexander Šatka, Martin Donoval, Daniel Donoval and Ľubica Stuchlíková
Opublikowane w: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Wydawca: Cleup sc

Modern p-GaN power devices under UIS conditions

Autorzy: J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics

Autorzy: S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Strain analysis and dicing defects of GaN on Si substrates

Autorzy: D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study

Autorzy: L. Lymperakis and J. Neugebauer
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Next generation 200mm substrates for GaN power devices

Autorzy: S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

QDB: Validated Plasma Chemistries Database

Autorzy: Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
Opublikowane w: 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, 2016
Wydawca: na

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autorzy: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Opublikowane w: The International Conference on Crystal Growth and Epitaxy -ICCGE-18, 2016
Wydawca: na

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Autorzy: X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA, Spain

High temperature failure mode in power GaN devices

Autorzy: F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors

Autorzy: K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Autorzy: S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna
Opublikowane w: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Strona(/y) 4B-4.1-4B-4.9, ISBN 978-1-5090-6641-4
Wydawca: IEEE
DOI: 10.1109/IRPS.2017.7936310

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autorzy: J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
Opublikowane w: 10th International Conference of Polish Society for Crystal Growth - ICPSCG10, 2016
Wydawca: na

Processes behind Suppressed Current Collapse Buffer Architectures

Autorzy: Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
Opublikowane w: The International Workshop on Nitride Semiconductors 2016, 2016
Wydawca: na

Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

Autorzy: J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
Opublikowane w: Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method, 2017
Wydawca: IUMA

QDB: A new database of plasma chemistries and reactions – concept and exemplar verification

Autorzy: A. Dzarasova
Opublikowane w: IOP Plasma physics conference, 2016
Wydawca: IOP publishing

UIS Capability of Modern GaN Power Devices

Autorzy: J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
Opublikowane w: 3rd international conference on advances in electronic and photonic technologies, 2016
Wydawca: na

Application Related Reliability Test Concept for GaN HEMT Power Devices

Autorzy: M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications

Autorzy: Jonathan Tennyson, Christian Hill, Sara Rahimi
Opublikowane w: International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, 2016
Wydawca: na

Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System

Autorzy: M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs

Autorzy: M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Impact of repetitive UIS on modern GaN power devices

Autorzy: Juraj Marek, Lubica Stuchlikova, Martin Jagelka, Ales Chvala, Patrik Pribytny, Martin Donoval, Daniel Donoval
Opublikowane w: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, Strona(/y) 173-176, ISBN 978-1-5090-3083-5
Wydawca: IEEE
DOI: 10.1109/ASDAM.2016.7805923

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Autorzy: Matteo Meneghini, Isabella Rossetto, Matteo Borga, Eleonora Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Stefaan Decoutere
Opublikowane w: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Strona(/y) 4B-5.1-4B-5.5, ISBN 978-1-5090-6641-4
Wydawca: IEEE
DOI: 10.1109/IRPS.2017.7936311

Guardbanding Techniques for the Semiconductor Industry: A Comparative Study

Autorzy: Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
Opublikowane w: The Joint Statistical Meeting – JSM2016, 2016
Wydawca: American Statistical Association

Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)

Autorzy: Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
Opublikowane w: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Wydawca: na

Constructing self-consistent validated plasma chemistry

Autorzy: S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
Opublikowane w: The 38th International Symposium on Dry Process (DPS2016), 2016
Wydawca: na

Guardbanding based on Device Drift Behavior

Autorzy: Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
Opublikowane w: Nineteenth Annual Automotive Electronics Reliability Workshop, 2017
Wydawca: na

Exposed die wafer level encapsulation by transfer molding

Autorzy: S.H.M. Kersjes, J.L.J. Zijl, W.G.J. Gal, H.A.M. Fierkens, H. Wensink
Opublikowane w: 2016 6th Electronic System-Integration Technology Conference (ESTC), 2016, Strona(/y) 1-4, ISBN 978-1-5090-1402-6
Wydawca: IEEE
DOI: 10.1109/ESTC.2016.7764480

Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations

Autorzy: Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
Opublikowane w: International MOS-AK Workshop, 2016
Wydawca: International MOS-AK Workshop

MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)

Autorzy: Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
Opublikowane w: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Wydawca: na

A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions

Autorzy: A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
Opublikowane w: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Wydawca: IUMA

Linking reactor-scale plasma modelling with feature-scale profile

Autorzy: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Opublikowane w: Dry Process Symposium, 2015
Wydawca: Dry Process Symposium

From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations

Autorzy: Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Opublikowane w: American Vacuum Society Symopsium, 2015
Wydawca: American Vacuum Society

Determination of guard bands for quality characteristics using copula-based models for longitudinal data

Autorzy: Hofer V., Leitner J., Nowak T
Opublikowane w: The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016, 2016
Wydawca: The German Consortium in Statistics

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Autorzy: L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Opublikowane w: 1st German Czechoslovak Conference on Crystal Growth, 2016
Wydawca: Fraunhofer Institute of Integrated Systems and Device Technology IISB

GaN specific mechanical phenomena and their influence on reliability in power HEMT operation

Autorzy: F.P. Pribahsnik
Opublikowane w: PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke Universität Magdeburg, 2018
Wydawca: Otto v Guericke Universität Magdeburg

First time demonstration of fully isolated GaN power devices using SOI technology

Autorzy: Karen Geens
Opublikowane w: imec magazine, 2017
Wydawca: imec

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Schaltkreis, Halbleiterbauelement und Verfahren

Numer wniosku/publikacji: US 7868353
Data: 2015-10-13

Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zurHerstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinemSilizium

Numer wniosku/publikacji: DE 102016209008
Data: 2016-05-24
Wnioskodawca/wnioskodawcy: SILTRONIC AG

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Numer wniosku/publikacji: US 20170186600A1
Data: 2015-12-24

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Numer wniosku/publikacji: EP 17159548
Data: 2017-03-07

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