Enhanced substrates and GaN pilot lines enabling compact power applications

Project Information

PowerBase

Grant agreement ID: 662133

DOI 10.3030/662133

Project closed

EC signature date 7 July 2015

Start date 1 May 2015

End date 30 June 2018

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Total cost € 90 254 494,23

EU contribution € 19 196 548,95

Coordinated by

INFINEON TECHNOLOGIES AUSTRIA AG
Austria

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Documents, reports (2)

8.2.1.2 Final Report on Dissemination Activities

Final Report on Dissemination Activities

D8.2.1.2 First Report on Dissemination Activities

First Report on Dissemination Activities

Other (4)

D8.1.3.1 Press Release: Launching the PowerBase Project

Press Release: Launching the PowerBase Project

D8.2.1.1 Initial Dissemination Plan and Set-up PowerBase Web-Site

Initial Dissemination Plan and Set-up PowerBase Web-Site

8.2.5.2 Organization of a workshop/training event

Organization of a workshop/training event

D8.2.5.1 Preparation of e-learning “Power electronics” module;

Preparation of e-learning “Power electronics” module;

Publications

Peer reviewed articles (14)

Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs

Author(s): Matteo Borga, Matteo Meneghini, Isabella Rossetto, Steve Stoffels, Niels Posthuma, Marleen Van Hove, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Published in: IEEE Transactions on Electron Devices, Issue 64/9, 2017, Page(s) 3616-3621, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2017.2726440

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

Author(s): I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A.N. Tallarico, G. Meneghesso, E. Zanoni
Published in: Microelectronics Reliability, Issue 76-77, 2017, Page(s) 298-303, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2017.06.061

Dislocation formation in heavily As-doped Czochralski grown silicon

Author(s): L. Stockmeier, L. Lehmann, A. Miller, C. Reimann, J. Friedrich
Published in: Crystal Research and Technology, Issue 52/8, 2017, Page(s) 1600373, ISSN 0232-1300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/crat.201600373

Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method

Author(s): L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich
Published in: Journal of Crystal Growth, Issue 491, 2018, Page(s) 57-65, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.03.028

Exploring the thermal limit of GaN power devices under extreme overload conditions

Author(s): F.P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Published in: Microelectronics Reliability, Issue 76-77, 2017, Page(s) 304-308, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2017.07.046

Adsorption and desorption of hydrogen at nonpolar GaN ( 1 1 ¯ 00 ) surfaces: Kinetics and impact on surface vibrational and electronic properties

Author(s): L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov
Published in: Physical Review B, Issue 95/19, 2017, Page(s) 1-11, ISSN 2469-9950
Publisher: American Physical Society
DOI: 10.1103/PhysRevB.95.195314

Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation

Author(s): Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
Published in: Microelectronics Reliability, Issue 78, 2017, Page(s) 148-155, ISSN 0026-2714
Publisher: Elsevier BV
DOI: 10.1016/j.microrel.2017.08.012

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Author(s): Ben Rackauskas, Michael J. Uren, Steve Stoffels, Ming Zhao, Stefaan Decoutere, Martin Kuball
Published in: IEEE Transactions on Electron Devices, Issue 65/5, 2018, Page(s) 1838-1842, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2813542

The 2018 GaN power electronics roadmap

Author(s): H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza, Stefaan Decoutere, L Di Cioccio, Bernd Eckardt, Takashi Egawa, P Fay, Joseph J Freedsman, L Guido, Oliver Häberlen, Geoff Haynes, Thomas Heckel, Dilini Hemakumara, Peter Houston, Jie Hu, Mengyuan Hua, Qingyun Huang, Alex Huang, Sheng J
Published in: Journal of Physics D: Applied Physics, Issue 51/16, 2018, Page(s) 163001, ISSN 0022-3727
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6463/aaaf9d

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Author(s): Xiangdong Li, Marleen Van Hove, Ming Zhao, Karen Geens, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, Stefaan Decoutere
Published in: IEEE Electron Device Letters, 2017, Page(s) 1-1, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/LED.2017.2703304

QDB: a new database of plasma chemistries and reactions

Author(s): Jonathan Tennyson, Sara Rahimi, Christian Hill, Lisa Tse, Anuradha Vibhakar, Dolica Akello-Egwel, Daniel B Brown, Anna Dzarasova, James R Hamilton, Dagmar Jaksch, Sebastian Mohr, Keir Wren-Little, Johannes Bruckmeier, Ankur Agarwal, Klaus Bartschat, Annemie Bogaerts, Jean-Paul Booth, Matthew J Goeckner, Khaled Hassouni, Yukikazu Itikawa, Bastiaan J Braams, E Krishnakumar, Annarita Laricchiuta, Nig
Published in: Plasma Sources Science and Technology, Issue 26/5, 2017, Page(s) 055014, ISSN 1361-6595
Publisher: IOP Publishing Ltd
DOI: 10.1088/1361-6595/aa6669

Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties

Author(s): Ales Chvala, Juraj Marek, Patrik Pribytny, Alexander Satka, Martin Donoval, Daniel Donoval
Published in: IEEE Transactions on Electron Devices, Issue 64/1, 2017, Page(s) 333-336, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2629024

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Author(s): Jie Hu, Steve Stoffels, Silvia Lenci, Brice De Jaeger, Nicolo Ronchi, Andrea Natale Tallarico, Dirk Wellekens, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Published in: IEEE Transactions on Electron Devices, Issue 63/9, 2016, Page(s) 3451-3458, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2016.2587103

Gate Stability of GaN-Based HEMTs with P-Type Gate

Author(s): Matteo Meneghini, Isabella Rossetto, Vanessa Rizzato, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Published in: Electronics, Issue 5/2, 2016, Page(s) 14, ISSN 2079-9292
Publisher: MDPI
DOI: 10.3390/electronics5020014

Conference proceedings (62)

Combined experi-mental and numerical approach to study electromechanical resonant phenomena in GaN-on-Si heterostructures

Author(s): F.P. Pribahsnik, M. Bernardoni, M. Nelhiebel, M. Mataln, A. Lindemann
Published in: Proceedings ESREF 2018, 2018, ISSN 0026-2714
Publisher: Elsevier Ltd.

Efficiency and Near-Field Emission Comparisons of a Si- and GaN Based Buck Converter Topology

Author(s): M.Lenzhofer, A. Frank
Published in: IEEE- PEMC 2018, 2018
Publisher: IEEE

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Author(s): S. You, N. E. Posthuma, N. Ronchi, S. Stoffels, B. Bakeroot, D. Wellekens, H. Liang, M. Zhao and S. Decoutere
Published in: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 2018, 2018
Publisher: IMT Bucharest

Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications

Author(s): N.E. Posthuma, S. You, S. Stoffels, H. Liang, M. Zhao and S. Decoutere
Published in: The 30th IEEE International Symposium on Power Semiconductor Devices and Ics (ISPSD), 2018
Publisher: IEEE

MOCVD Growth and Characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for Monolithic Integration

Author(s): Ming Zhao, Karen Geens, Xiangdong Li, Marleen Van Hove, Vesa-Pekka Lempinen, Jaakko Sormunen, Robert Langer, Stefaan Decoutere
Published in: ICNS-12, 2017
Publisher: ICNS-12

GaN Device architectures enabled by next generation substrates

Author(s): S. Stoffels, K. Geens, N. Posthuma, M. Zhao, H. Liang, X. Li, D. Wellekens, S. You, B. Bakeroot, M.Van Hove, S. Decoutere
Published in: GaN Marathon 2.0, 2018
Publisher: University of Padova

Substrate optimization for high reliability GaN devices

Author(s): S. Stoffels, K. Geens, X. Li, M. Zhao, M. Borga, E. Zanoni, G. Meneghesso, M. Meneghini, N. Posthuma, M. Van Hove and S. Decoutere
Published in: MRS2018 Symposium, 2018
Publisher: Cambridge University Press

Comparative analysis of GaN HEMT vs. Si CoolMOS for a high-frequency MMC topology

Author(s): Ander Avila, Asier Garcia-Bediaga, Oier Onederra, Alejandro Ruias, Alberto Rodriguez
Published in: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe), 2017, Page(s) P.1-P.9, ISBN 978-90-75815-27-6
Publisher: IEEE
DOI: 10.23919/EPE17ECCEEurope.2017.8099334

Reliability of power devices: Bias-induced threshold voltage instability and dielectric breakdown in GaN MIS-HEMTs

Author(s): Gaudenzio Meneghesso, Davide Bisi, Isabella Rossetto, Maria Ruzzarin, Matteo Meneghini, Enrico Zanoni
Published in: 2016 IEEE International Integrated Reliability Workshop (IIRW), 2016, Page(s) 35-40, ISBN 978-1-5090-4193-0
Publisher: IEEE
DOI: 10.1109/IIRW.2016.7904896

Analysis of Optimal Operation Conditions for GaN-based Power Converters

Author(s): Ander Avila, Asier Garcia-Bediaga, Alberto Rodriguez, Luis Mir, Alejandro Rujas
Published in: Energy Conversion Congress and Exposition, 2018
Publisher: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Author(s): X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Published in: 20th European Conference on Power Electronics and Applications, 2018
Publisher: European Power Electronics Association

Thermal performance analysis of GaN-based high-power converters

Author(s): Ander Avila, Xavier Perpiña, Xavier Jorda, Asier Garcia-Bediaga, Alejandro Rujas
Published in: European Conference on Power Electronics and Applications, 2018
Publisher: IEEE

Analysis of natural convection cooling solutions for GaN HEMT transistors

Author(s): Xavier Jorda, Ander Avila, Asier Garcia-Bediaga, Xavier Perpiña, Miquel Vellvehi
Published in: European Conference on Power Electronics and Applications, 2018
Publisher: IEEE

Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers

Author(s): PRIESOL, Juraj - ŠATKA, Alexander - VISALLI, D. - DERLUYN, J. - ZHAO, M. - STOFFELS, Steve
Published in: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Publisher: University of Žilina

Advanced power electronics in e-learning

Author(s): MAREK, Juraj - CHVÁLA, Aleš - BENKO, Peter - SZOBOLOVSZKÝ, Robert - KOVÁČ, Jaroslav jr. - STUCHLÍKOVÁ, Ľubica
Published in: Distance learning, simulation and communication 2017, 2017, ISBN 978-80-7231-415-7
Publisher: University of Defence, Brno

Modern P-Gan Power HEMT Devices Under UIS Conditions

Author(s): Juraj Marek, Alexander Šatka, Martin Jagelka, Aleš Chvála, Patrik Príbytný, Martin Donoval and Daniel Donoval
Published in: 5th International conference on advances in electronic and photonic technologies, 2017, ISBN 978-80-554-1342-6
Publisher: University of Žilina

Electrothermal analysis of power multifinger HEMTs supported by advanced 3-D device simulation

Author(s): CHVÁLA, Aleš - MAREK, Juraj - PRÍBYTNÝ, Patrik - ŠATKA, Alexander - DONOVAL, Daniel - STOFFELS, Steve - POSTHUMA, Niels - DECOUTERE, Stefaan
Published in: SISPAD 2017 - International conference on simulation of semiconductor processes and devices., 2017, ISBN 978-4-86348-612-6
Publisher: IEEE

Point defects and impurities in mon-crystalline silicon - some recent advances

Author(s): N. Ganagona, I. Kolevatov. H.M. Ayedh, A. Galeckas, L. Vines, E.V. Monakhov and B.G. Svensson
Published in: The 7th International Symposium on Advanced Science and Technology of Silicon Materials (2016), 2016
Publisher: The Japan Society for the Promotion of Science

Study of the stability of GaN-HEMTs with p-type Gate under Forward Gate Bias

Author(s): Ruzzarin M. et al.
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

On Wafer Application Testing for 600 V E mode GaN HEMTs in Boost Regime

Author(s): Barbato A. et al.
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

Challenges towards highly reliabile GaN power transistors

Author(s): Meneghini M. et al.
Published in: GaN Marathon 2018, 2018
Publisher: Cleup sc

Analysis of the Drain-to-Substrate Leakage of Power HEMTs Grown on Highly Resistive Silicon Substrate

Author(s): Borga M. et al.
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

Effect of surface reconstruction and rehybridization on the compositional limits of III-Nitride ternary alloys

Author(s): L. Lymperakis and J. Neugebauer
Published in: GaN Marathon 2.0, April 18-19, 2018, Padova (Italy) –, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

Thermal Characterization of SMD Packaged 650V GaN HEMTs Assembled in PCB Boards

Author(s): X. Jordà, X. Perpiñà, M. Vellvehi, D. Sánchez, A. García-Bediaga
Published in: GaN Marathon 2.0, 2018
Publisher: Cleup sc

Performance Analysis of GaN Devices in Compact Power Applications

Author(s): A. Garcia-Bediaga, O.R. Schmidt, J. Herrero, J. Danzberger, and H. Pairitsch
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

GaN Devices and Transformer Design in High Frequency Power Applications

Author(s): J. Herrero, J. Milla, D. Antolín.
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

3-D Device Electrothermal Simulation for Analysis of Multifinger Power HEMTs

Author(s): Aleš Chvála, Juraj Marek, Alexander Šatka, Juraj Priesol, Patrik Príbytný, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval,
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

Degradation of p-GaN HEMTs exposed to clamped inductive switching

Author(s): Juraj Marek, Martin Jagelka, Jozef Kozárik, Aleš Chvála, Patrik Príbytný, Alexander Šatka, Martin Donoval, Daniel Donoval and Ľubica Stuchlíková
Published in: GaN Marathon 2018, 2018, ISBN 978-88-6787-916-8
Publisher: Cleup sc

Modern p-GaN power devices under UIS conditions

Author(s): J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics

Author(s): S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Strain analysis and dicing defects of GaN on Si substrates

Author(s): D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study

Author(s): L. Lymperakis and J. Neugebauer
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Next generation 200mm substrates for GaN power devices

Author(s): S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

QDB: Validated Plasma Chemistries Database

Author(s): Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
Published in: 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, 2016
Publisher: na

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Author(s): L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Published in: The International Conference on Crystal Growth and Epitaxy -ICCGE-18, 2016
Publisher: na

200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration

Author(s): X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA, Spain

High temperature failure mode in power GaN devices

Author(s): F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors

Author(s): K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

Author(s): S. Stoffels, B. Bakeroot, T. L. Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna
Published in: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Page(s) 4B-4.1-4B-4.9, ISBN 978-1-5090-6641-4
Publisher: IEEE
DOI: 10.1109/IRPS.2017.7936310

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Author(s): J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
Published in: 10th International Conference of Polish Society for Crystal Growth - ICPSCG10, 2016
Publisher: na

Processes behind Suppressed Current Collapse Buffer Architectures

Author(s): Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
Published in: The International Workshop on Nitride Semiconductors 2016, 2016
Publisher: na

Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

Author(s): J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
Published in: Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method, 2017
Publisher: IUMA

QDB: A new database of plasma chemistries and reactions – concept and exemplar verification

Author(s): A. Dzarasova
Published in: IOP Plasma physics conference, 2016
Publisher: IOP publishing

UIS Capability of Modern GaN Power Devices

Author(s): J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
Published in: 3rd international conference on advances in electronic and photonic technologies, 2016
Publisher: na

Application Related Reliability Test Concept for GaN HEMT Power Devices

Author(s): M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications

Author(s): Jonathan Tennyson, Christian Hill, Sara Rahimi
Published in: International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, 2016
Publisher: na

Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System

Author(s): M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs

Author(s): M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Impact of repetitive UIS on modern GaN power devices

Author(s): Juraj Marek, Lubica Stuchlikova, Martin Jagelka, Ales Chvala, Patrik Pribytny, Martin Donoval, Daniel Donoval
Published in: 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016, Page(s) 173-176, ISBN 978-1-5090-3083-5
Publisher: IEEE
DOI: 10.1109/ASDAM.2016.7805923

Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

Author(s): Matteo Meneghini, Isabella Rossetto, Matteo Borga, Eleonora Canato, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Stefaan Decoutere
Published in: 2017 IEEE International Reliability Physics Symposium (IRPS), 2017, Page(s) 4B-5.1-4B-5.5, ISBN 978-1-5090-6641-4
Publisher: IEEE
DOI: 10.1109/IRPS.2017.7936311

Guardbanding Techniques for the Semiconductor Industry: A Comparative Study

Author(s): Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
Published in: The Joint Statistical Meeting – JSM2016, 2016
Publisher: American Statistical Association

Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)

Author(s): Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
Published in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Publisher: na

Constructing self-consistent validated plasma chemistry

Author(s): S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
Published in: The 38th International Symposium on Dry Process (DPS2016), 2016
Publisher: na

Guardbanding based on Device Drift Behavior

Author(s): Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
Published in: Nineteenth Annual Automotive Electronics Reliability Workshop, 2017
Publisher: na

Exposed die wafer level encapsulation by transfer molding

Author(s): S.H.M. Kersjes, J.L.J. Zijl, W.G.J. Gal, H.A.M. Fierkens, H. Wensink
Published in: 2016 6th Electronic System-Integration Technology Conference (ESTC), 2016, Page(s) 1-4, ISBN 978-1-5090-1402-6
Publisher: IEEE
DOI: 10.1109/ESTC.2016.7764480

Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations

Author(s): Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
Published in: International MOS-AK Workshop, 2016
Publisher: International MOS-AK Workshop

MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)

Author(s): Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
Published in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016
Publisher: na

A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions

Author(s): A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017
Publisher: IUMA

Linking reactor-scale plasma modelling with feature-scale profile

Author(s): Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Published in: Dry Process Symposium, 2015
Publisher: Dry Process Symposium

From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations

Author(s): Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
Published in: American Vacuum Society Symopsium, 2015
Publisher: American Vacuum Society

Determination of guard bands for quality characteristics using copula-based models for longitudinal data

Author(s): Hofer V., Leitner J., Nowak T
Published in: The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016, 2016
Publisher: The German Consortium in Statistics

Possible reasons for dislocation formation in heavily doped Czochralski silicon

Author(s): L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
Published in: 1st German Czechoslovak Conference on Crystal Growth, 2016
Publisher: Fraunhofer Institute of Integrated Systems and Device Technology IISB

Thesis and dissertations (1)

GaN specific mechanical phenomena and their influence on reliability in power HEMT operation

Author(s): F.P. Pribahsnik
Published in: PhD thesis @ Faculty of electronics and information tecnhologies, Otto v Guericke Universität Magdeburg, 2018
Publisher: Otto v Guericke Universität Magdeburg

Other (1)

First time demonstration of fully isolated GaN power devices using SOI technology

Author(s): Karen Geens
Published in: imec magazine, 2017
Publisher: imec

Intellectual Property Rights

Patent (8)

Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zurHerstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinemSilizium

Application/Publication number: DE 102016209008
Date: 2016-05-24
Applicant(s): SILTRONIC AG

Schaltkreis, Halbleiterbauelement und Verfahren

Application/Publication number: US 7868353
Date: 2015-10-13

SEMICONDUCTOR WAFER AND METHOD

Application/Publication number: US 20170186600A1
Date: 2015-12-24
Applicant(s): INFINEON TECHNOLOGIES AUSTRIA AG

Verfahren zur Herstellung einer Halbleiterscheibe aus einkristallinem Silizium, Vorrichtung zurHerstellung einer Halbleiterscheibe aus einkristallinem Silizium und Halbleiterscheibe aus einkristallinemSilizium

Application/Publication number: DE 102016209008
Date: 2016-05-24
Applicant(s): SILTRONIC AG

GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE

Application/Publication number: EP 17159548
Date: 2017-03-07
Applicant(s): INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM

SEMICONDUCTOR WAFER AND METHOD

Application/Publication number: US 20170186600A1
Date: 2015-12-24

GROUP III NITRIDE BASED SEMICONDUCTOR DEVICE

Application/Publication number: EP 17159548
Date: 2017-03-07

Schaltkreis, Halbleiterbauelement und Verfahren

Application/Publication number: US 7868353
Date: 2015-10-13
Applicant(s): INFINEON TECHNOLOGIES AUSTRIA AG