MOS-based Quantum Information TechnOlogy

Risultati finali

Data management plan

D4.3 Report on all- electrical two- axis coherent control of a NW-FET spin qubit

D4.3 @ M24 (R): Report on all-electrical two-axis coherent control of a NW-FET spin qubit 

D4.4 Report on coherent control of NW- FET spin qubits using globally- applied μ-wave field combined with local addressing via electric fields

Report on coherent control of NW-FET spin qubits using globally-applied μ- wave field combined with local addressing via electric fields.

D5.3 Design of a fault tolerant logic qubit

D5.3 @M36 (R): Design of a fault tolerant logic qubit

D3.2 Report on first realization of single qubits

Report on first realization of single qubits: QD single spin (CEA, UCPH), QD singlet-triplet (HIT, UCPH), QD hybrid (CNR), donor single spin (UCL) and donor-QD singlet- triplet (UCL, HIT) qubits

D7.1 Dissemination and exploitation report

Dissemination and exploitation report

D1.2 Kick-off meeting

Kick-off meeting

D3.1 Report on tunability of split-gate devices into qubit operation

Report on tunability of split-gate devices into qubit operation (CEA, UCL, UCPH,HIT, CNR, VTT)

D7.3 Dissemination and exploitation report

Dissemination and exploitation report

D1.7 Final report

Final report

D7.2 Dissemination and exploitation report

Dissemination and exploitation report

D1.1 Setting up a website

Setting up a website

Pubblicazioni

Pauli spin blockade in CMOS double quantum dot devices

Autori: D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, L. Hutin, M. Vinet, X. Jehl, S. De Franceschi, M. Sanquer
Pubblicato in: physica status solidi (b), Numero 254/3, 2017, Pagina/e 1600581, ISSN 0370-1972
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201600581

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Autori: E. Ferraro, M. Fanciulli, M. De Michielis
Pubblicato in: Quantum Information Processing, Numero 16/11, 2017, ISSN 1570-0755
Editore: Kluwer Academic Publishers
DOI: 10.1007/s11128-017-1729-1

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Autori: A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Pubblicato in: Applied Physics Letters, Numero 110/21, 2017, Pagina/e 212101, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.4984224

A silicon-based single-electron interferometer coupled to a fermionic sea

Autori: Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Rubén M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba
Pubblicato in: Physical Review B, Numero 97/4, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.97.045405

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Autori: Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Laviéville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer
Pubblicato in: npj Quantum Information, Numero 4/1, 2018, ISSN 2056-6387
Editore: Nature Publishing Group
DOI: 10.1038/s41534-018-0059-1

All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Autori: Léo Bourdet, Yann-Michel Niquet
Pubblicato in: Physical Review B, Numero 97/15, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.97.155433

Magnon-photon coupling in the noncollinear magnetic insulator Cu 2 OSeO 3

Autori: L. V. Abdurakhimov, S. Khan, N. A. Panjwani, J. D. Breeze, M. Mochizuki, S. Seki, Y. Tokura, J. J. L. Morton, H. Kurebayashi
Pubblicato in: Physical Review B, Numero 99/14, 2019, ISSN 2469-9950
Editore: APS
DOI: 10.1103/physrevb.99.140401

Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

Autori: Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi
Pubblicato in: Physical Review Letters, Numero 120/13, 2018, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/PhysRevLett.120.137702

Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

Autori: J. Mansir, P. Conti, Z. Zeng, J. J. Pla, P. Bertet, M. W. Swift, C. G. Van de Walle, M. L. W. Thewalt, B. Sklenard, Y. M. Niquet, J. J. L. Morton
Pubblicato in: Physical Review Letters, Numero 120/16, 2018, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/PhysRevLett.120.167701

Coherence Time Analysis in Semiconducting Hybrid Qubit under Realistic Experimental Conditions

Autori: Elena Ferraro, Marco Fanciulli, Marco De Michielis
Pubblicato in: Advanced Quantum Technologies, Numero 1/3, 2018, Pagina/e 1800040, ISSN 2511-9044
Editore: Wiley
DOI: 10.1002/qute.201800040

Strain-Induced Spin-Resonance Shifts in Silicon Devices

Autori: J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet
Pubblicato in: Physical Review Applied, Numero 9/4, 2018, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/PhysRevApplied.9.044014

Radio-Frequency Capacitive Gate-Based Sensing

Autori: Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Pubblicato in: Physical Review Applied, Numero 10/1, 2018, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/PhysRevApplied.10.014018

Superconducting MoSi nanowires

Autori: J S Lehtinen, A Kemppinen, E Mykkänen, M Prunnila, A J Manninen
Pubblicato in: Superconductor Science and Technology, Numero 31/1, 2018, Pagina/e 015002, ISSN 0953-2048
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6668/aa954b

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Autori: E. Ferraro, M. Fanciulli, M. De Michielis
Pubblicato in: Quantum Information Processing, Numero 17/6, 2018, ISSN 1570-0755
Editore: Kluwer Academic Publishers
DOI: 10.1007/s11128-018-1896-8

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

Autori: S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba
Pubblicato in: Physical Review Applied, Numero 9/5, 2018, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.9.054016

Cryogenic MOS Transistor Model

Autori: Arnout Beckers, Farzan Jazaeri, Christian Enz
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/9, 2018, Pagina/e 3617-3625, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2854701

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Autori: Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba
Pubblicato in: Communications Physics, Numero 1/1, 2018, ISSN 2399-3650
Editore: Nature Publishing Group
DOI: 10.1038/s42005-018-0066-8

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Autori: H. Bohuslavskyi, S. Barraud, V. Barral, M. Casse, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/9, 2018, Pagina/e 3682-3688, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2859636

Electrical manipulation of semiconductor spin qubits within the g -matrix formalism

Autori: Benjamin Venitucci, Léo Bourdet, Daniel Pouzada, Yann-Michel Niquet
Pubblicato in: Physical Review B, Numero 98/15, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.98.155319

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Autori: Simon Schaal, Alessandro Rossi, Virginia N. Ciriano-Tejel, Tsung-Yeh Yang, Sylvain Barraud, John J. L. Morton, M. Fernando Gonzalez-Zalba
Pubblicato in: Nature Electronics, Numero 2/6, 2019, Pagina/e 236-242, ISSN 2520-1131
Editore: Nature
DOI: 10.1038/s41928-019-0259-5

Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Autori: Arnout Beckers, Farzan Jazaeri, Christian Enz
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 6, 2018, Pagina/e 1007-1018, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/JEDS.2018.2817458

Side-wall spacer passivated sub- μ m Josephson junction fabrication process

Autori: Leif Grönberg, Mikko Kiviranta, Visa Vesterinen, Janne Lehtinen, Slawomir Simbierowicz, Juho Luomahaara, Mika Prunnila, Juha Hassel
Pubblicato in: Superconductor Science and Technology, Numero 30/12, 2017, Pagina/e 125016, ISSN 0953-2048
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6668/aa9411

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Autori: V. Mazzocchi, P.G. Sennikov, A.D. Bulanov, M.F. Churbanov, B. Bertrand, L. Hutin, J.P. Barnes, M.N. Drozdov, J.M. Hartmann, M. Sanquer
Pubblicato in: Journal of Crystal Growth, Numero 509, 2019, Pagina/e 1-7, ISSN 0022-0248
Editore: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.12.010

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Autori: A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-019-10848-z

Quantum and tunneling capacitance in charge and spin qubits

Autori: R. Mizuta, R. M. Otxoa, A. C. Betz, M. F. Gonzalez-Zalba
Pubblicato in: Physical Review B, Numero 95/4, 2017, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.95.045414

A CMOS silicon spin qubit

Autori: R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi
Pubblicato in: Nature Communications, Numero 7, 2016, Pagina/e 13575, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/ncomms13575

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Autori: H. Bohuslavskyi, D. Kotekar-Patil, R. Maurand, A. Corna, S. Barraud, L. Bourdet, L. Hutin, Y.-M. Niquet, X. Jehl, S. De Franceschi, M. Vinet, M. Sanquer
Pubblicato in: Applied Physics Letters, Numero 109/19, 2016, Pagina/e 193101, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.4966946

Electric-field tuning of the valley splitting in silicon corner dots

Autori: D. J. Ibberson, L. Bourdet, J. C. Abadillo-Uriel, I. Ahmed, S. Barraud, M. J. Calderón, Y.-M. Niquet, M. F. Gonzalez-Zalba
Pubblicato in: Applied Physics Letters, Numero 113/5, 2018, Pagina/e 053104, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5040474

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

Autori: E Ferraro, M Fanciulli, M De Michielis
Pubblicato in: Journal of Physics Communications, Numero 2/11, 2018, Pagina/e 115022, ISSN 2399-6528
Editore: IOPScience
DOI: 10.1088/2399-6528/aaf088

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

Autori: Bishnu Patra, Rosario M. Incandela, Jeroen P. G. van Dijk, Harald A. R. Homulle, Lin Song, Mina Shahmohammadi, Robert Bogdan Staszewski, Andrei Vladimirescu, Masoud Babaie, Fabio Sebastiano, Edoardo Charbon
Pubblicato in: IEEE Journal of Solid-State Circuits, Numero 53/1, 2018, Pagina/e 309-321, ISSN 0018-9200
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2017.2737549

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

Autori: E. Ferraro, M. Fanciulli, M. De Michielis
Pubblicato in: Physical Review B, Numero 100/3, 2019, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.100.035310

Small-signal equivalent circuit for double quantum dots at low-frequencies

Autori: M. Esterli, R. M. Otxoa, M. F. Gonzalez-Zalba
Pubblicato in: Applied Physics Letters, Numero 114/25, 2019, Pagina/e 253505, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5098889

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Autori: David J. Ibberson, Lisa A. Ibberson, Geoff Smithson, James A. Haigh, Sylvain Barraud, M. Fernando Gonzalez-Zalba
Pubblicato in: Applied Physics Letters, Numero 114/12, 2019, Pagina/e 123501, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5082894

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Autori: Rubén M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba
Pubblicato in: Physical Review B, Numero 100/20, 2019, ISSN 2469-9950
Editore: APS
DOI: 10.1103/physrevb.100.205425

Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Autori: Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth
Pubblicato in: Nano Letters, Numero 19/8, 2019, Pagina/e 5628-5633, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b02149

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Autori: H. Bohuslavskyi, A. G. M. Jansen, S. Barraud, V. Barral, M. Casse, L. Le Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. De Franceschi, M. Vinet, M. Sanquer
Pubblicato in: IEEE Electron Device Letters, Numero 40/5, 2019, Pagina/e 784-787, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2903111

Gate-based high fidelity spin readout in a CMOS device

Autori: Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier
Pubblicato in: Nature Nanotechnology, Numero 14/8, 2019, Pagina/e 737-741, ISSN 1748-3387
Editore: Nature Publishing Group
DOI: 10.1038/s41565-019-0443-9

Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits

Autori: Elena Ferraro, Marco De Michielis
Pubblicato in: Entropy, Numero 21/11, 2019, Pagina/e 1042, ISSN 1099-4300
Editore: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e21111042

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Autori: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L.W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J.L. Morton
Pubblicato in: Physical Review Applied, Numero 11/5, 2019, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.11.054014

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Autori: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bauerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y.-M. Niquet, M. Vinet
Pubblicato in: 2018 IEEE Symposium on VLSI Technology, 2018, Pagina/e 125-126, ISBN 978-1-5386-4218-4
Editore: IEEE
DOI: 10.1109/VLSIT.2018.8510665

Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing

Autori: Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz
Pubblicato in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Pagina/e 1-4, ISBN 978-1-5386-4811-7
Editore: IEEE
DOI: 10.1109/ULIS.2018.8354742

Towards scalable silicon quantum computing

Autori: M. Vinet, L. Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, R. Maurand, S. Barraud, M. Urdampilleta, C. Bauerle, M. Sanquer, X. Jehl, Y.-M. Niquer, S. De Franceschi, T. Meunier
Pubblicato in: 2018 76th Device Research Conference (DRC), 2018, Pagina/e 1-2, ISBN 978-1-5386-3028-0
Editore: IEEE
DOI: 10.1109/DRC.2018.8442198

Cryogenic MOSFET Threshold Voltage Model

Autori: Arnout Beckers, Farzan Jazaeri, Christian Enz
Pubblicato in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Pagina/e 94-97, ISBN 978-1-7281-1539-9
Editore: IEEE
DOI: 10.1109/essderc.2019.8901806

Analysis on Noise Requirements of RF Front-End Circuits for Spin Qubit Readout

Autori: Y. Peng, A. Ruffino, E. Charbon
Pubblicato in: 25th International Conference on Noise and Fluctuations, 2019
Editore: International Conference on Noise and Fluctuations
DOI: 10.5075/epfl-iclab-icnf-269250

SOI technology for quantum information processing

Autori: S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y.-M. Niquet, M. Sanquer, M. Vinet
Pubblicato in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Pagina/e 13.4.1-13.4.4, ISBN 978-1-5090-3902-9
Editore: IEEE
DOI: 10.1109/iedm.2016.7838409

Diritti di proprietà intellettuale

Procédé de fabrication d'un composant électronique à doubles boîtes quantiques

Numero candidatura/pubblicazione: FR 17 60103
Data: 2017-10-26

Dispositif quantique à qubits de spin

Numero candidatura/pubblicazione: FR 17 54156
Data: 2017-05-11

THERMOMETER

Numero candidatura/pubblicazione: 17 199173
Data: 2017-10-30

Procédé de contrôle d'un dispositif quantique à qubit de spin

Numero candidatura/pubblicazione: FR 17 55967
Data: 2017-06-28

DISPOSITIF QUANTIQUE COMPRENANT DES TRANSISTORS FET ET DES QUBITS CO-INTEGRES SUR UN MEME SUBSTRAT

Numero candidatura/pubblicazione: 18 51743
Data: 2018-02-27

Dispositif quantique à qubits de spin couplés de manière modulable

Numero candidatura/pubblicazione: FR 17 59789
Data: 2017-10-18

Risultati finali

Pubblicazioni

Diritti di proprietà intellettuale

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