MOS-based Quantum Information TechnOlogy

Project Information

MOS-QUITO

Grant agreement ID: 688539

DOI 10.3030/688539

Project closed

EC signature date 26 October 2015

Start date 1 April 2016

End date 30 September 2019

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Total cost € 3 973 360,75

EU contribution € 3 450 622,00

Coordinated by

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

Deliverables

Other (1)

D1.3 Data management plan

Data management plan

Documents, reports (11)

D4.3 Report on all- electrical two- axis coherent control of a NW-FET spin qubit

D4.3 @ M24 (R): Report on all-electrical two-axis coherent control of a NW-FET spin qubit


D4.4 Report on coherent control of NW- FET spin qubits using globally- applied μ-wave field combined with local addressing via electric fields

Report on coherent control of NW-FET spin qubits using globally-applied μ- wave field combined with local addressing via electric fields.

D5.3 Design of a fault tolerant logic qubit

D5.3 @M36 (R): Design of a fault tolerant logic qubit

D3.2 Report on first realization of single qubits

Report on first realization of single qubits: QD single spin (CEA, UCPH), QD singlet-triplet (HIT, UCPH), QD hybrid (CNR), donor single spin (UCL) and donor-QD singlet- triplet (UCL, HIT) qubits

D7.1 Dissemination and exploitation report

Dissemination and exploitation report

D1.2 Kick-off meeting

Kick-off meeting

D3.1 Report on tunability of split-gate devices into qubit operation

Report on tunability of split-gate devices into qubit operation (CEA, UCL, UCPH,HIT, CNR, VTT)

D7.3 Dissemination and exploitation report

Dissemination and exploitation report

D1.7 Final report

Final report

D7.2 Dissemination and exploitation report

Dissemination and exploitation report

D1.1 Setting up a website

Setting up a website

Publications

Peer reviewed articles (39)

Pauli spin blockade in CMOS double quantum dot devices

Author(s): D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, L. Hutin, M. Vinet, X. Jehl, S. De Franceschi, M. Sanquer
Published in: physica status solidi (b), Issue 254/3, 2017, Page(s) 1600581, ISSN 0370-1972
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201600581

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Author(s): E. Ferraro, M. Fanciulli, M. De Michielis
Published in: Quantum Information Processing, Issue 16/11, 2017, ISSN 1570-0755
Publisher: Kluwer Academic Publishers
DOI: 10.1007/s11128-017-1729-1

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Author(s): A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Published in: Applied Physics Letters, Issue 110/21, 2017, Page(s) 212101, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.4984224

A silicon-based single-electron interferometer coupled to a fermionic sea

Author(s): Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Rubén M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba
Published in: Physical Review B, Issue 97/4, 2018, ISSN 2469-9950
Publisher: American Physical Society
DOI: 10.1103/physrevb.97.045405

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Author(s): Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Laviéville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer
Published in: npj Quantum Information, Issue 4/1, 2018, ISSN 2056-6387
Publisher: Nature Publishing Group
DOI: 10.1038/s41534-018-0059-1

All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Author(s): Léo Bourdet, Yann-Michel Niquet
Published in: Physical Review B, Issue 97/15, 2018, ISSN 2469-9950
Publisher: American Physical Society
DOI: 10.1103/PhysRevB.97.155433

Magnon-photon coupling in the noncollinear magnetic insulator Cu 2 OSeO 3

Author(s): L. V. Abdurakhimov, S. Khan, N. A. Panjwani, J. D. Breeze, M. Mochizuki, S. Seki, Y. Tokura, J. J. L. Morton, H. Kurebayashi
Published in: Physical Review B, Issue 99/14, 2019, ISSN 2469-9950
Publisher: APS
DOI: 10.1103/physrevb.99.140401

Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

Author(s): Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi
Published in: Physical Review Letters, Issue 120/13, 2018, ISSN 0031-9007
Publisher: American Physical Society
DOI: 10.1103/PhysRevLett.120.137702

Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

Author(s): J. Mansir, P. Conti, Z. Zeng, J. J. Pla, P. Bertet, M. W. Swift, C. G. Van de Walle, M. L. W. Thewalt, B. Sklenard, Y. M. Niquet, J. J. L. Morton
Published in: Physical Review Letters, Issue 120/16, 2018, ISSN 0031-9007
Publisher: American Physical Society
DOI: 10.1103/PhysRevLett.120.167701

Coherence Time Analysis in Semiconducting Hybrid Qubit under Realistic Experimental Conditions

Author(s): Elena Ferraro, Marco Fanciulli, Marco De Michielis
Published in: Advanced Quantum Technologies, Issue 1/3, 2018, Page(s) 1800040, ISSN 2511-9044
Publisher: Wiley
DOI: 10.1002/qute.201800040

Strain-Induced Spin-Resonance Shifts in Silicon Devices

Author(s): J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet
Published in: Physical Review Applied, Issue 9/4, 2018, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/PhysRevApplied.9.044014

Radio-Frequency Capacitive Gate-Based Sensing

Author(s): Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Published in: Physical Review Applied, Issue 10/1, 2018, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/PhysRevApplied.10.014018

Superconducting MoSi nanowires

Author(s): J S Lehtinen, A Kemppinen, E Mykkänen, M Prunnila, A J Manninen
Published in: Superconductor Science and Technology, Issue 31/1, 2018, Page(s) 015002, ISSN 0953-2048
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6668/aa954b

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Author(s): E. Ferraro, M. Fanciulli, M. De Michielis
Published in: Quantum Information Processing, Issue 17/6, 2018, ISSN 1570-0755
Publisher: Kluwer Academic Publishers
DOI: 10.1007/s11128-018-1896-8

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

Author(s): S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba
Published in: Physical Review Applied, Issue 9/5, 2018, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.9.054016

Cryogenic MOS Transistor Model

Author(s): Arnout Beckers, Farzan Jazaeri, Christian Enz
Published in: IEEE Transactions on Electron Devices, Issue 65/9, 2018, Page(s) 3617-3625, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2854701

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Author(s): Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba
Published in: Communications Physics, Issue 1/1, 2018, ISSN 2399-3650
Publisher: Nature Publishing Group
DOI: 10.1038/s42005-018-0066-8

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Author(s): H. Bohuslavskyi, S. Barraud, V. Barral, M. Casse, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet
Published in: IEEE Transactions on Electron Devices, Issue 65/9, 2018, Page(s) 3682-3688, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2859636

Electrical manipulation of semiconductor spin qubits within the g -matrix formalism

Author(s): Benjamin Venitucci, Léo Bourdet, Daniel Pouzada, Yann-Michel Niquet
Published in: Physical Review B, Issue 98/15, 2018, ISSN 2469-9950
Publisher: American Physical Society
DOI: 10.1103/physrevb.98.155319

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Author(s): Simon Schaal, Alessandro Rossi, Virginia N. Ciriano-Tejel, Tsung-Yeh Yang, Sylvain Barraud, John J. L. Morton, M. Fernando Gonzalez-Zalba
Published in: Nature Electronics, Issue 2/6, 2019, Page(s) 236-242, ISSN 2520-1131
Publisher: Nature
DOI: 10.1038/s41928-019-0259-5

Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Author(s): Arnout Beckers, Farzan Jazaeri, Christian Enz
Published in: IEEE Journal of the Electron Devices Society, Issue 6, 2018, Page(s) 1007-1018, ISSN 2168-6734
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/JEDS.2018.2817458

Side-wall spacer passivated sub- μ m Josephson junction fabrication process

Author(s): Leif Grönberg, Mikko Kiviranta, Visa Vesterinen, Janne Lehtinen, Slawomir Simbierowicz, Juho Luomahaara, Mika Prunnila, Juha Hassel
Published in: Superconductor Science and Technology, Issue 30/12, 2017, Page(s) 125016, ISSN 0953-2048
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6668/aa9411

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Author(s): V. Mazzocchi, P.G. Sennikov, A.D. Bulanov, M.F. Churbanov, B. Bertrand, L. Hutin, J.P. Barnes, M.N. Drozdov, J.M. Hartmann, M. Sanquer
Published in: Journal of Crystal Growth, Issue 509, 2019, Page(s) 1-7, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.12.010

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Author(s): A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi
Published in: Nature Communications, Issue 10/1, 2019, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/s41467-019-10848-z

Quantum and tunneling capacitance in charge and spin qubits

Author(s): R. Mizuta, R. M. Otxoa, A. C. Betz, M. F. Gonzalez-Zalba
Published in: Physical Review B, Issue 95/4, 2017, ISSN 2469-9950
Publisher: American Physical Society
DOI: 10.1103/PhysRevB.95.045414

A CMOS silicon spin qubit

Author(s): R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi
Published in: Nature Communications, Issue 7, 2016, Page(s) 13575, ISSN 2041-1723
Publisher: Nature Publishing Group
DOI: 10.1038/ncomms13575

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Author(s): H. Bohuslavskyi, D. Kotekar-Patil, R. Maurand, A. Corna, S. Barraud, L. Bourdet, L. Hutin, Y.-M. Niquet, X. Jehl, S. De Franceschi, M. Vinet, M. Sanquer
Published in: Applied Physics Letters, Issue 109/19, 2016, Page(s) 193101, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.4966946

Electric-field tuning of the valley splitting in silicon corner dots

Author(s): D. J. Ibberson, L. Bourdet, J. C. Abadillo-Uriel, I. Ahmed, S. Barraud, M. J. Calderón, Y.-M. Niquet, M. F. Gonzalez-Zalba
Published in: Applied Physics Letters, Issue 113/5, 2018, Page(s) 053104, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5040474

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

Author(s): E Ferraro, M Fanciulli, M De Michielis
Published in: Journal of Physics Communications, Issue 2/11, 2018, Page(s) 115022, ISSN 2399-6528
Publisher: IOPScience
DOI: 10.1088/2399-6528/aaf088

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

Author(s): Bishnu Patra, Rosario M. Incandela, Jeroen P. G. van Dijk, Harald A. R. Homulle, Lin Song, Mina Shahmohammadi, Robert Bogdan Staszewski, Andrei Vladimirescu, Masoud Babaie, Fabio Sebastiano, Edoardo Charbon
Published in: IEEE Journal of Solid-State Circuits, Issue 53/1, 2018, Page(s) 309-321, ISSN 0018-9200
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2017.2737549

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

Author(s): E. Ferraro, M. Fanciulli, M. De Michielis
Published in: Physical Review B, Issue 100/3, 2019, ISSN 2469-9950
Publisher: American Physical Society
DOI: 10.1103/physrevb.100.035310

Small-signal equivalent circuit for double quantum dots at low-frequencies

Author(s): M. Esterli, R. M. Otxoa, M. F. Gonzalez-Zalba
Published in: Applied Physics Letters, Issue 114/25, 2019, Page(s) 253505, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5098889

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Author(s): David J. Ibberson, Lisa A. Ibberson, Geoff Smithson, James A. Haigh, Sylvain Barraud, M. Fernando Gonzalez-Zalba
Published in: Applied Physics Letters, Issue 114/12, 2019, Page(s) 123501, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5082894

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Author(s): Rubén M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba
Published in: Physical Review B, Issue 100/20, 2019, ISSN 2469-9950
Publisher: APS
DOI: 10.1103/physrevb.100.205425

Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Author(s): Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth
Published in: Nano Letters, Issue 19/8, 2019, Page(s) 5628-5633, ISSN 1530-6984
Publisher: American Chemical Society
DOI: 10.1021/acs.nanolett.9b02149

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Author(s): H. Bohuslavskyi, A. G. M. Jansen, S. Barraud, V. Barral, M. Casse, L. Le Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. De Franceschi, M. Vinet, M. Sanquer
Published in: IEEE Electron Device Letters, Issue 40/5, 2019, Page(s) 784-787, ISSN 0741-3106
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2903111

Gate-based high fidelity spin readout in a CMOS device

Author(s): Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier
Published in: Nature Nanotechnology, Issue 14/8, 2019, Page(s) 737-741, ISSN 1748-3387
Publisher: Nature Publishing Group
DOI: 10.1038/s41565-019-0443-9

Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits

Author(s): Elena Ferraro, Marco De Michielis
Published in: Entropy, Issue 21/11, 2019, Page(s) 1042, ISSN 1099-4300
Publisher: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e21111042

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Author(s): Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L.W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J.L. Morton
Published in: Physical Review Applied, Issue 11/5, 2019, ISSN 2331-7019
Publisher: American Physical Society
DOI: 10.1103/physrevapplied.11.054014

Conference proceedings (6)

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Author(s): L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bauerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y.-M. Niquet, M. Vinet
Published in: 2018 IEEE Symposium on VLSI Technology, 2018, Page(s) 125-126, ISBN 978-1-5386-4218-4
Publisher: IEEE
DOI: 10.1109/VLSIT.2018.8510665

Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing

Author(s): Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz
Published in: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Page(s) 1-4, ISBN 978-1-5386-4811-7
Publisher: IEEE
DOI: 10.1109/ULIS.2018.8354742

Towards scalable silicon quantum computing

Author(s): M. Vinet, L. Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, R. Maurand, S. Barraud, M. Urdampilleta, C. Bauerle, M. Sanquer, X. Jehl, Y.-M. Niquer, S. De Franceschi, T. Meunier
Published in: 2018 76th Device Research Conference (DRC), 2018, Page(s) 1-2, ISBN 978-1-5386-3028-0
Publisher: IEEE
DOI: 10.1109/DRC.2018.8442198

Cryogenic MOSFET Threshold Voltage Model

Author(s): Arnout Beckers, Farzan Jazaeri, Christian Enz
Published in: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Page(s) 94-97, ISBN 978-1-7281-1539-9
Publisher: IEEE
DOI: 10.1109/essderc.2019.8901806

Analysis on Noise Requirements of RF Front-End Circuits for Spin Qubit Readout

Author(s): Y. Peng, A. Ruffino, E. Charbon
Published in: 25th International Conference on Noise and Fluctuations, 2019
Publisher: International Conference on Noise and Fluctuations
DOI: 10.5075/epfl-iclab-icnf-269250

SOI technology for quantum information processing

Author(s): S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y.-M. Niquet, M. Sanquer, M. Vinet
Published in: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Page(s) 13.4.1-13.4.4, ISBN 978-1-5090-3902-9
Publisher: IEEE
DOI: 10.1109/iedm.2016.7838409

Intellectual Property Rights

Patent (6)

Procédé de fabrication d'un composant électronique à doubles boîtes quantiques

Application/Publication number: FR 17 60103
Date: 2017-10-26

Dispositif quantique à qubits de spin

Application/Publication number: FR 17 54156
Date: 2017-05-11

THERMOMETER

Application/Publication number: 17 199173
Date: 2017-10-30

Procédé de contrôle d'un dispositif quantique à qubit de spin

Application/Publication number: FR 17 55967
Date: 2017-06-28

DISPOSITIF QUANTIQUE COMPRENANT DES TRANSISTORS FET ET DES QUBITS CO-INTEGRES SUR UN MEME SUBSTRAT

Application/Publication number: 18 51743
Date: 2018-02-27

Dispositif quantique à qubits de spin couplés de manière modulable

Application/Publication number: FR 17 59789
Date: 2017-10-18