MOS-based Quantum Information TechnOlogy

Rezultaty

Data management plan

D4.3 Report on all- electrical two- axis coherent control of a NW-FET spin qubit

D4.3 @ M24 (R): Report on all-electrical two-axis coherent control of a NW-FET spin qubit 

D4.4 Report on coherent control of NW- FET spin qubits using globally- applied μ-wave field combined with local addressing via electric fields

Report on coherent control of NW-FET spin qubits using globally-applied μ- wave field combined with local addressing via electric fields.

D5.3 Design of a fault tolerant logic qubit

D5.3 @M36 (R): Design of a fault tolerant logic qubit

D3.2 Report on first realization of single qubits

Report on first realization of single qubits: QD single spin (CEA, UCPH), QD singlet-triplet (HIT, UCPH), QD hybrid (CNR), donor single spin (UCL) and donor-QD singlet- triplet (UCL, HIT) qubits

D7.1 Dissemination and exploitation report

Dissemination and exploitation report

D1.2 Kick-off meeting

Kick-off meeting

D3.1 Report on tunability of split-gate devices into qubit operation

Report on tunability of split-gate devices into qubit operation (CEA, UCL, UCPH,HIT, CNR, VTT)

D7.3 Dissemination and exploitation report

Dissemination and exploitation report

D1.7 Final report

Final report

D7.2 Dissemination and exploitation report

Dissemination and exploitation report

D1.1 Setting up a website

Setting up a website

Publikacje

Pauli spin blockade in CMOS double quantum dot devices

Autorzy: D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, L. Hutin, M. Vinet, X. Jehl, S. De Franceschi, M. Sanquer
Opublikowane w: physica status solidi (b), Numer 254/3, 2017, Strona(/y) 1600581, ISSN 0370-1972
Wydawca: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201600581

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment

Autorzy: E. Ferraro, M. Fanciulli, M. De Michielis
Opublikowane w: Quantum Information Processing, Numer 16/11, 2017, ISSN 1570-0755
Wydawca: Kluwer Academic Publishers
DOI: 10.1007/s11128-017-1729-1

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Autorzy: A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Opublikowane w: Applied Physics Letters, Numer 110/21, 2017, Strona(/y) 212101, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4984224

A silicon-based single-electron interferometer coupled to a fermionic sea

Autorzy: Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Rubén M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba
Opublikowane w: Physical Review B, Numer 97/4, 2018, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/physrevb.97.045405

Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot

Autorzy: Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Laviéville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer
Opublikowane w: npj Quantum Information, Numer 4/1, 2018, ISSN 2056-6387
Wydawca: Nature Publishing Group
DOI: 10.1038/s41534-018-0059-1

All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing

Autorzy: Léo Bourdet, Yann-Michel Niquet
Opublikowane w: Physical Review B, Numer 97/15, 2018, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.97.155433

Magnon-photon coupling in the noncollinear magnetic insulator Cu 2 OSeO 3

Autorzy: L. V. Abdurakhimov, S. Khan, N. A. Panjwani, J. D. Breeze, M. Mochizuki, S. Seki, Y. Tokura, J. J. L. Morton, H. Kurebayashi
Opublikowane w: Physical Review B, Numer 99/14, 2019, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.99.140401

Electrical Spin Driving by g -Matrix Modulation in Spin-Orbit Qubits

Autorzy: Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi
Opublikowane w: Physical Review Letters, Numer 120/13, 2018, ISSN 0031-9007
Wydawca: American Physical Society
DOI: 10.1103/PhysRevLett.120.137702

Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

Autorzy: J. Mansir, P. Conti, Z. Zeng, J. J. Pla, P. Bertet, M. W. Swift, C. G. Van de Walle, M. L. W. Thewalt, B. Sklenard, Y. M. Niquet, J. J. L. Morton
Opublikowane w: Physical Review Letters, Numer 120/16, 2018, ISSN 0031-9007
Wydawca: American Physical Society
DOI: 10.1103/PhysRevLett.120.167701

Coherence Time Analysis in Semiconducting Hybrid Qubit under Realistic Experimental Conditions

Autorzy: Elena Ferraro, Marco Fanciulli, Marco De Michielis
Opublikowane w: Advanced Quantum Technologies, Numer 1/3, 2018, Strona(/y) 1800040, ISSN 2511-9044
Wydawca: Wiley
DOI: 10.1002/qute.201800040

Strain-Induced Spin-Resonance Shifts in Silicon Devices

Autorzy: J. J. Pla, A. Bienfait, G. Pica, J. Mansir, F. A. Mohiyaddin, Z. Zeng, Y. M. Niquet, A. Morello, T. Schenkel, J. J. L. Morton, P. Bertet
Opublikowane w: Physical Review Applied, Numer 9/4, 2018, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/PhysRevApplied.9.044014

Radio-Frequency Capacitive Gate-Based Sensing

Autorzy: Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Opublikowane w: Physical Review Applied, Numer 10/1, 2018, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/PhysRevApplied.10.014018

Superconducting MoSi nanowires

Autorzy: J S Lehtinen, A Kemppinen, E Mykkänen, M Prunnila, A J Manninen
Opublikowane w: Superconductor Science and Technology, Numer 31/1, 2018, Strona(/y) 015002, ISSN 0953-2048
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6668/aa954b

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises

Autorzy: E. Ferraro, M. Fanciulli, M. De Michielis
Opublikowane w: Quantum Information Processing, Numer 17/6, 2018, ISSN 1570-0755
Wydawca: Kluwer Academic Publishers
DOI: 10.1007/s11128-018-1896-8

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell

Autorzy: S. Schaal, S. Barraud, J. J. L. Morton, M. F. Gonzalez-Zalba
Opublikowane w: Physical Review Applied, Numer 9/5, 2018, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/physrevapplied.9.054016

Cryogenic MOS Transistor Model

Autorzy: Arnout Beckers, Farzan Jazaeri, Christian Enz
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/9, 2018, Strona(/y) 3617-3625, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2854701

Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot

Autorzy: Imtiaz Ahmed, Anasua Chatterjee, Sylvain Barraud, John J. L. Morton, James A. Haigh, M. Fernando Gonzalez-Zalba
Opublikowane w: Communications Physics, Numer 1/1, 2018, ISSN 2399-3650
Wydawca: Nature Publishing Group
DOI: 10.1038/s42005-018-0066-8

Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization

Autorzy: H. Bohuslavskyi, S. Barraud, V. Barral, M. Casse, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/9, 2018, Strona(/y) 3682-3688, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2018.2859636

Electrical manipulation of semiconductor spin qubits within the g -matrix formalism

Autorzy: Benjamin Venitucci, Léo Bourdet, Daniel Pouzada, Yann-Michel Niquet
Opublikowane w: Physical Review B, Numer 98/15, 2018, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/physrevb.98.155319

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices

Autorzy: Simon Schaal, Alessandro Rossi, Virginia N. Ciriano-Tejel, Tsung-Yeh Yang, Sylvain Barraud, John J. L. Morton, M. Fernando Gonzalez-Zalba
Opublikowane w: Nature Electronics, Numer 2/6, 2019, Strona(/y) 236-242, ISSN 2520-1131
Wydawca: Nature
DOI: 10.1038/s41928-019-0259-5

Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Autorzy: Arnout Beckers, Farzan Jazaeri, Christian Enz
Opublikowane w: IEEE Journal of the Electron Devices Society, Numer 6, 2018, Strona(/y) 1007-1018, ISSN 2168-6734
Wydawca: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/JEDS.2018.2817458

Side-wall spacer passivated sub- μ m Josephson junction fabrication process

Autorzy: Leif Grönberg, Mikko Kiviranta, Visa Vesterinen, Janne Lehtinen, Slawomir Simbierowicz, Juho Luomahaara, Mika Prunnila, Juha Hassel
Opublikowane w: Superconductor Science and Technology, Numer 30/12, 2017, Strona(/y) 125016, ISSN 0953-2048
Wydawca: Institute of Physics Publishing
DOI: 10.1088/1361-6668/aa9411

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Autorzy: V. Mazzocchi, P.G. Sennikov, A.D. Bulanov, M.F. Churbanov, B. Bertrand, L. Hutin, J.P. Barnes, M.N. Drozdov, J.M. Hartmann, M. Sanquer
Opublikowane w: Journal of Crystal Growth, Numer 509, 2019, Strona(/y) 1-7, ISSN 0022-0248
Wydawca: Elsevier BV
DOI: 10.1016/j.jcrysgro.2018.12.010

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Autorzy: A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi
Opublikowane w: Nature Communications, Numer 10/1, 2019, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/s41467-019-10848-z

Quantum and tunneling capacitance in charge and spin qubits

Autorzy: R. Mizuta, R. M. Otxoa, A. C. Betz, M. F. Gonzalez-Zalba
Opublikowane w: Physical Review B, Numer 95/4, 2017, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/PhysRevB.95.045414

A CMOS silicon spin qubit

Autorzy: R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi
Opublikowane w: Nature Communications, Numer 7, 2016, Strona(/y) 13575, ISSN 2041-1723
Wydawca: Nature Publishing Group
DOI: 10.1038/ncomms13575

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Autorzy: H. Bohuslavskyi, D. Kotekar-Patil, R. Maurand, A. Corna, S. Barraud, L. Bourdet, L. Hutin, Y.-M. Niquet, X. Jehl, S. De Franceschi, M. Vinet, M. Sanquer
Opublikowane w: Applied Physics Letters, Numer 109/19, 2016, Strona(/y) 193101, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4966946

Electric-field tuning of the valley splitting in silicon corner dots

Autorzy: D. J. Ibberson, L. Bourdet, J. C. Abadillo-Uriel, I. Ahmed, S. Barraud, M. J. Calderón, Y.-M. Niquet, M. F. Gonzalez-Zalba
Opublikowane w: Applied Physics Letters, Numer 113/5, 2018, Strona(/y) 053104, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5040474

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

Autorzy: E Ferraro, M Fanciulli, M De Michielis
Opublikowane w: Journal of Physics Communications, Numer 2/11, 2018, Strona(/y) 115022, ISSN 2399-6528
Wydawca: IOPScience
DOI: 10.1088/2399-6528/aaf088

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

Autorzy: Bishnu Patra, Rosario M. Incandela, Jeroen P. G. van Dijk, Harald A. R. Homulle, Lin Song, Mina Shahmohammadi, Robert Bogdan Staszewski, Andrei Vladimirescu, Masoud Babaie, Fabio Sebastiano, Edoardo Charbon
Opublikowane w: IEEE Journal of Solid-State Circuits, Numer 53/1, 2018, Strona(/y) 309-321, ISSN 0018-9200
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2017.2737549

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots

Autorzy: E. Ferraro, M. Fanciulli, M. De Michielis
Opublikowane w: Physical Review B, Numer 100/3, 2019, ISSN 2469-9950
Wydawca: American Physical Society
DOI: 10.1103/physrevb.100.035310

Small-signal equivalent circuit for double quantum dots at low-frequencies

Autorzy: M. Esterli, R. M. Otxoa, M. F. Gonzalez-Zalba
Opublikowane w: Applied Physics Letters, Numer 114/25, 2019, Strona(/y) 253505, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5098889

Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronic devices

Autorzy: David J. Ibberson, Lisa A. Ibberson, Geoff Smithson, James A. Haigh, Sylvain Barraud, M. Fernando Gonzalez-Zalba
Opublikowane w: Applied Physics Letters, Numer 114/12, 2019, Strona(/y) 123501, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5082894

Quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry

Autorzy: Rubén M. Otxoa, Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Franco Nori, M. Fernando Gonzalez-Zalba
Opublikowane w: Physical Review B, Numer 100/20, 2019, ISSN 2469-9950
Wydawca: APS
DOI: 10.1103/physrevb.100.205425

Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Autorzy: Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth
Opublikowane w: Nano Letters, Numer 19/8, 2019, Strona(/y) 5628-5633, ISSN 1530-6984
Wydawca: American Chemical Society
DOI: 10.1021/acs.nanolett.9b02149

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Autorzy: H. Bohuslavskyi, A. G. M. Jansen, S. Barraud, V. Barral, M. Casse, L. Le Guevel, X. Jehl, L. Hutin, B. Bertrand, G. Billiot, G. Pillonnet, F. Arnaud, P. Galy, S. De Franceschi, M. Vinet, M. Sanquer
Opublikowane w: IEEE Electron Device Letters, Numer 40/5, 2019, Strona(/y) 784-787, ISSN 0741-3106
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2019.2903111

Gate-based high fidelity spin readout in a CMOS device

Autorzy: Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier
Opublikowane w: Nature Nanotechnology, Numer 14/8, 2019, Strona(/y) 737-741, ISSN 1748-3387
Wydawca: Nature Publishing Group
DOI: 10.1038/s41565-019-0443-9

Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits

Autorzy: Elena Ferraro, Marco De Michielis
Opublikowane w: Entropy, Numer 21/11, 2019, Strona(/y) 1042, ISSN 1099-4300
Wydawca: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/e21111042

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Autorzy: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L.W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J.L. Morton
Opublikowane w: Physical Review Applied, Numer 11/5, 2019, ISSN 2331-7019
Wydawca: American Physical Society
DOI: 10.1103/physrevapplied.11.054014

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Autorzy: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bauerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y.-M. Niquet, M. Vinet
Opublikowane w: 2018 IEEE Symposium on VLSI Technology, 2018, Strona(/y) 125-126, ISBN 978-1-5386-4218-4
Wydawca: IEEE
DOI: 10.1109/VLSIT.2018.8510665

Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing

Autorzy: Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi, Louis Hutin, Silvano De Franceschi, Christian Enz
Opublikowane w: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, Strona(/y) 1-4, ISBN 978-1-5386-4811-7
Wydawca: IEEE
DOI: 10.1109/ULIS.2018.8354742

Towards scalable silicon quantum computing

Autorzy: M. Vinet, L. Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, R. Maurand, S. Barraud, M. Urdampilleta, C. Bauerle, M. Sanquer, X. Jehl, Y.-M. Niquer, S. De Franceschi, T. Meunier
Opublikowane w: 2018 76th Device Research Conference (DRC), 2018, Strona(/y) 1-2, ISBN 978-1-5386-3028-0
Wydawca: IEEE
DOI: 10.1109/DRC.2018.8442198

Cryogenic MOSFET Threshold Voltage Model

Autorzy: Arnout Beckers, Farzan Jazaeri, Christian Enz
Opublikowane w: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, Strona(/y) 94-97, ISBN 978-1-7281-1539-9
Wydawca: IEEE
DOI: 10.1109/essderc.2019.8901806

Analysis on Noise Requirements of RF Front-End Circuits for Spin Qubit Readout

Autorzy: Y. Peng, A. Ruffino, E. Charbon
Opublikowane w: 25th International Conference on Noise and Fluctuations, 2019
Wydawca: International Conference on Noise and Fluctuations
DOI: 10.5075/epfl-iclab-icnf-269250

SOI technology for quantum information processing

Autorzy: S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y.-M. Niquet, M. Sanquer, M. Vinet
Opublikowane w: 2016 IEEE International Electron Devices Meeting (IEDM), 2016, Strona(/y) 13.4.1-13.4.4, ISBN 978-1-5090-3902-9
Wydawca: IEEE
DOI: 10.1109/iedm.2016.7838409

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Rezultaty

Publikacje

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