3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Project Information

CHALLENGE

Grant agreement ID: 720827

DOI 10.3030/720827

Project closed

EC signature date 9 November 2016

Start date 1 January 2017

End date 30 June 2021

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials

Total cost € 8 048 322,50

EU contribution € 7 997 822,50

Coordinated by

CONSIGLIO NAZIONALE DELLE RICERCHE
Italy