Rf Engineered substrates to FostER fEm performaNCE

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Publicaciones

Multi-band dual-mode antenna tunable matching network for broadband applications

Autores: F. Chan Wai Po, R. Abdaoui, A. Giry
Publicado en: 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2016, Página(s) 492-495, ISBN 978-1-5090-6113-6
Editor: IEEE
DOI: 10.1109/ICECS.2016.7841246

A 130-nm SOI CMOS reconfigurable multimode multiband power amplifier for 2G/3G/4G handset applications

Autores: Pierre Ferris, Gauthier Tant, Alexandre Giry, J. D. Arnould, J. M. Fournier
Publicado en: 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2016, Página(s) 254-257, ISBN 978-1-4673-8651-7
Editor: IEEE
DOI: 10.1109/RFIC.2016.7508299

Study of SOI CMOS tunable capacitor architectures and application to antenna aperture tuning

Autores: Dominique Nicolas, Alexandre Giry, Essia Ben Abdallah, Serge Bories, Thierry Parra, Christophe Delaveaud, Pierre Vincent
Publicado en: 2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, Página(s) 1-4, ISBN 978-1-5090-0698-4
Editor: IEEE
DOI: 10.1109/MWSYM.2016.7538835

Système de Détection d'impédance en technologie CMOS SOI pour accord d'antennes

Autores: D. Nicolas, A. Serhan , P. Ferris, A. Giry, T. Parra
Publicado en: Journées Nationales Micro-ondes, Edición Mai, 2017
Editor: Journées Nationales Micro-ondes

A fully-integrated SOI CMOS complex-impedance detector for matching network tuning in LTE power amplifier

Autores: D. Nicolas, A. Serhan, A. Giry, T. Parra, E. Mercier
Publicado en: 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, Página(s) 15-18, ISBN 978-1-5090-4626-3
Editor: IEEE
DOI: 10.1109/RFIC.2017.7969005

RF SOI Technology for PA/FEM Integration

Autores: A. Giry, A. Serhan, P. Ferris
Publicado en: 2017
Editor: IEEE

Output matching network design for broadband class B/J power amplifier

Autores: Saad Boutayeb, Alexandre Giry, Ayssar Serhan, Jean-Daniel Arnould, Estelle Lauga-Larroze
Publicado en: 2017 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2017, Página(s) 41-44, ISBN 978-1-5090-6508-0
Editor: IEEE
DOI: 10.1109/PRIME.2017.7974102

RFSOI for Tunable RF

Autores: A. Giry
Publicado en: Edición Mars, 2017
Editor: GDR Ondes - GT4

Output Matching Network Design for Class B/J PA

Autores: S. Boutayeb
Publicado en: Edición Mars, 2017
Editor: GDR Ondes - GT4

Broadband SOI PA with tunable matching network for improved LTE performances under high VSWR

Autores: Ayssar Serhan, Pierre Ferris, Alexandre Giry
Publicado en: 2016 IEEE International Conference on Electronics, Circuits and Systems (ICECS), 2016, Página(s) 488-491, ISBN 978-1-5090-6113-6
Editor: IEEE
DOI: 10.1109/ICECS.2016.7841245

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

Autores: Yeghoyan Taguhi, Alassaad Kassem, McMitchell Sean R.C., Gutierrez Marina, Souliere Véronique, Araujo Daniel, Ferro Gabriel
Publicado en: Materials Science Forum, Edición Vol. 924, 2018, Página(s) 128-131
Editor: Trans Tech Publications

Silicon Deposition on 3C-SiC Seeds of Different Orientations

Autores: T. YEGHOYAN, K. ALASSAAD, V. SOULIERE, G. FERRO
Publicado en: Materials Science Forum, Edición Vol. 897, 2017, Página(s) 87-90
Editor: Trans tech publications

RF performance of passive components on state-of-art trap rich silicon-on-insulator substrates

Autores: Lei Zhu, Shuangke Liu, F. Allibert, E. Desbonnets, I. Radu, Xinen Zhu, Yumin Lu
Publicado en: 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, Página(s) 1-2, ISBN 978-1-4673-9478-9
Editor: IEEE
DOI: 10.1109/VLSI-TSA.2016.7480530

A 28-GHz transceiver front-end with T/R switching achieving 11.2-dBm OP<inf>1dB</inf>, 33.8% PAE<inf>max</inf> and 4-dB NF in 22-nm FD-SOI for 5G communication

Autores: Yao Liu, Giovanni Mangraviti, Shinya Hitomi, Khaled Khalaf, Bjorn Debaillie, Piet Wambacq
Publicado en: 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Edición Date of Conference: 15-18 Oct. 2018, 2018, Página(s) 1-3, ISBN 978-1-5386-7627-1
Editor: IEEE
DOI: 10.1109/s3s.2018.8640209

Enabling 5G — A substrate material perspective: AEM, ET/ID

Autores: Ionut Radu, Eric Desbonnets, Manuel Sellier, Christophe Didier
Publicado en: 2018 29th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Edición Date of Conference: 30 April-3 May 2018, 2018, Página(s) 143-147, ISBN 978-1-5386-3748-7
Editor: IEEE
DOI: 10.1109/asmc.2018.8373174

SOI Wafer Technology for Advanced Mos Applications

Autores: Oleg Kononchuk, Didier Landru, Damien Massy, Nadia Ben Mohamed, Youngpil Kim, Pablo Acosta-Alba and François Rieutord
Publicado en: 236th ECS meetings, Edición Oct 3rd 2018, 2018
Editor: © 2018 ECS - The Electrochemical Society

(Invited) Substrate and Device Engineering for IoT and Automotive

Autores: Manuel Sellier
Publicado en: ECS Transactions, Edición 85/8, 2018, Página(s) 3-13, ISSN 1938-5862
Editor: Electrochemical Society, Inc.
DOI: 10.1149/08508.0003ecst

RF Characteristics of Two Generations of RFeSI HR-SOI Substrates Over Temperature

Autores: Lei Zhu, Shuangke Liu, Frederic Allibert, Ionut Radu, Xinen Zhu, Yumin Lu, Xi Wang
Publicado en: IEEE Microwave and Wireless Components Letters, Edición 28/5, 2018, Página(s) 377-379, ISSN 1531-1309
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2018.2813884

RF Small- and Large-Signal Characteristics of CPW and TFMS Lines on Trap-Rich HR-SOI Substrates

Autores: Babak Kazemi Esfeh, Martin Rack, Khaled Ben Ali, Frederic Allibert, Jean-Pierre Raskin
Publicado en: IEEE Transactions on Electron Devices, Edición 65/8, 2018, Página(s) 3120-3126, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2845679

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