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Contenuto archiviato il 2024-06-18

Topological insulators: computational exploration of emerging electronic materials

Obiettivo

"Topological insulators are the recently discovered class of materials that have a bulk electronic band gap, but also exhibit conducting surface states as a result of non-trivial band structure topology induced by strong spin-orbit interactions. These peculiar surface states are characterized by a number of novel properties such as graphene-like band dispersion and helical spin textures with no spin degeneracy which makes them immune to scattering. Due to these extraordinary properties, topological insulators are expected to find numerous technological applications, in particular in electronics and its next-day extensions - spintronics and quantum information processing. The project aims at exploring these novel electronic materials in silico; that is, by performing computer simulations using numerical methods of various levels of complexity. The global objective of the proposed research plan is to provide the theoretical support required to build a link between the fundamental physical properties of topological insulators and their prospective technological application by investigating materials science, chemistry and device-related aspects of these materials. In particular, the following three research directions will be explored: (i) understanding the structure-property relations and rational design of new materials with topologically non-trivial electronic structures, (ii) modeling realistic ""second generation"" topological insulators (bismuth chalcogenides Bi2Se3, Bi2Te3, and related materials), and (iii) investigating magnetic and transport properties of topological insulators and their interfaces related to the device applications. The proposed interdisciplinary program intends to make a strong impact in basic research and future technologies, and will eventually promote the rapidly expanding field of topological insulators in European science."

Invito a presentare proposte

ERC-2012-StG_20111012
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Meccanismo di finanziamento

ERC-SG - ERC Starting Grant

Istituzione ospitante

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Contributo UE
€ 1 643 997,60
Indirizzo
BATIMENT CE 3316 STATION 1
1015 Lausanne
Svizzera

Mostra sulla mappa

Regione
Schweiz/Suisse/Svizzera Région lémanique Vaud
Tipo di attività
Higher or Secondary Education Establishments
Ricercatore principale
Oleg Yazyev (Prof.)
Contatto amministrativo
Caroline Vandevyver (Ms.)
Collegamenti
Costo totale
Nessun dato

Beneficiari (1)