Quantum Large Scale Integretion in Silicon

Risultati finali

D6.1.1.a Scientific publications, Workshop, Training - Annual Report

Scientific publications, Workshop, Training - Annual Report

D1.1.3 Website, kick-off meeting, management plan - including risk

Website, kick-off meeting, management plan - including risk

Pubblicazioni

Compilation and scaling strategies for a silicon quantum processor with sparse two-dimensional connectivity

Autori: O. Crawford; J. R. Cruise; N. Mertig; M. F. Gonzalez-Zalba
Pubblicato in: NPJ Quantum Information, Numero 9:13, 2023, ISSN 2056-6387
Editore: Nature Publishing Group
DOI: 10.1038/s41534-023-00679-8

Variability of electron and hole spin qubits due to interface roughness and charge traps

Autori: Martinez, Biel; Niquet, Yann-Michel
Pubblicato in: Physical Review Applied, Numero 17/2, 2022, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.17.024022

Probing quantum devices with radio-frequency reflectometry

Autori: Florian Vigneau; Federico Fedele; Anasua Chatterjee; David Reilly; Ferdinand Kuemmeth; M. Fernando Gonzalez-Zalba; Edward Laird; Natalia Ares
Pubblicato in: Applied Physics Review, Numero 10, 2023, ISSN 1931-9401
Editore: AIP Publishing LLC
DOI: 10.1063/5.0088229

Crosstalk analysis for single-qubit and two-qubit gates in spin qubit arrays

Autori: Irina Heinz; Guido Burkard
Pubblicato in: Physical Review B, Numero 104, 4, 2021, ISSN 2469-9969
Editore: American Physical Society
DOI: 10.1103/physrevb.104.045420

Reflectometry of charge transitions in a silicon quadruple dot

Autori: Bohuslavskyi, Heorhii; Ansaloni, Fabio; Chatterjee, Anasua; Fedele, Federico; Rasmussen, Torbj��rn; Brovang, Bertram; Li, Jing; Hutin, Louis; Venitucci, Benjamin; Bertrand, Benoit; Vinet, Maud; Niquet, Yann-Michel; Kuemmeth, Ferdinand
Pubblicato in: New Journal of Physics, 2023, ISSN 1367-2630
Editore: Institute of Physics Publishing
DOI: 10.1088/1367-2630/acc126

Quantum Dot-Based Frequency Multiplier

Autori: G.A. Oakes; L. Peri; L. Cochrane; F. Martins; L. Hutin; B. Bertrand; M. Vinet; A. Gomez Saiz; C.J.B. Ford; C.G. Smith; M.F. Gonzalez-Zalba
Pubblicato in: PRX Quantum, Numero 4, 2023, ISSN 2691-3399
Editore: American Physical Society
DOI: 10.1103/prxquantum.4.020346

Limitations in Quantum Computing from Resource Constraints

Autori: Marco Fellous-Asiani; Jing Hao Chai; Robert S. Whitney; Alexia Auffèves; Hui Khoon Ng; Hui Khoon Ng; Hui Khoon Ng
Pubblicato in: PRX Quantum, Numero 2, 2021, ISSN 2691-3399
Editore: APS Physics
DOI: 10.1103/prxquantum.2.040335

Electrical Control of Uniformity in Quantum Dot Devices

Autori: Marcel Meyer; Corentin Déprez; Timo R. van Abswoude; Ilja N. Meijer; Dingshan Liu; Chien-An Wang; Saurabh Karwal; Stefan Oosterhout; Francesco Borsoi; Amir Sammak; Nico W. Hendrickx; Giordano Scappucci; Menno Veldhorst
Pubblicato in: Nano Letter, Numero 23, 2023, Pagina/e 2522-2529, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.2c04446

Reducing charge noise in quantum dots by using thin silicon quantum wells

Autori: Brian Paquelet Wuetz; Davide Degli Esposti; Anne-Marije J. Zwerver; Sergey V. Amitonov; Marc Botifoll; Jordi Arbiol; Lieven M. K. Vandersypen; Maximilian Russ; Giordano Scappucci
Pubblicato in: Nature Communications, Numero 14:1385, 2023, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-023-36951-w

Autonomous Estimation of High-Dimensional Coulomb Diamonds from Sparse Measurements

Autori: Anasua Chatterjee; Fabio Ansaloni; Torbjørn Rasmussen; Bertram Brovang; Federico Fedele; Heorhii Bohuslavskyi; Oswin Krause; Ferdinand Kuemmeth
Pubblicato in: Physical Review Applied, Numero 18:064040, 2022, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.18.064040

Semiconductor spin qubits

Autori: Guido Burkard; Thaddeus D. Ladd; Andrew Pan; John M. Nichol; Jason R. Petta
Pubblicato in: REVIEWS OF MODERN PHYSICS, Numero 95, 2023, ISSN 1539-0756
Editore: American Physical Society
DOI: 10.1103/revmodphys.95.025003

Enhanced Spin Coherence while Displacing Electron in a Two-Dimensional Array of Quantum Dots

Autori: Pierre-André Mortemousque; Baptiste Jadot; Emmanuel Chanrion; Vivien Thiney; Christopher Bäuerle; Arne Ludwig; Andreas D. Wieck; Matias Urdampilleta; Tristan Meunier
Pubblicato in: PRX Quantum, Numero 2/3, 2021, ISSN 2691-3399
Editore: APS Physics
DOI: 10.1103/prxquantum.2.030331

Quantum Technologies Need a Quantum Energy Initiative

Autori: Auffèves, A.
Pubblicato in: PRX Quantum, Numero 3, 2022, ISSN 2691-3399
Editore: American Physical Society
DOI: 10.1103/prxquantum.3.020101

Nonlinear Response and Crosstalk of Electrically Driven Silicon Spin Qubits

Autori: Brennan Undseth; Xiao Xue; Mohammad Mehmandoost; Maximilian Rimbach-Russ; Pieter T. Eendebak; Nodar Samkharadze; Amir Sammak; Viatcheslav V. Dobrovitski; Giordano Scappucci; Lieven M.K. Vandersypen
Pubblicato in: Physical Review Applied, 19(4), Numero 19, 2023, ISSN 2331-7019
Editore: American Physical Society
DOI: 10.1103/physrevapplied.19.044078

Roadmap on quantum nanotechnologies

Autori: Arne Laucht; Frank Hohls; Niels Ubbelohde; M. Fernando Gonzalez-Zalba; David J. Reilly; Søren Stobbe; Tim Schröder; Tim Schröder; Pasquale Scarlino; Jonne V. Koski; Andrew S. Dzurak; Chih Hwan Yang; Jun Yoneda; Ferdinand Kuemmeth; Hendrik Bluhm; Jarryd J. Pla; Charles D. Hill; Joe Salfi; Akira Oiwa; Juha T. Muhonen; Ewold Verhagen; Matthew LaHaye; Matthew LaHaye; Hyun Ho Kim; Hyun Ho Kim; Adam
Pubblicato in: Laucht , A , Hohls , F , Ubbelohde , N , Gonzalez-Zalba , M F , Reilly , D J , Stobbe , S , Schroeder , T , Scarlino , P , Koski , J , Dzurak , A , Yang , C-H , Yoneda , J , Kuemmeth , F , Bluhm , H , Pla , J , Hill , C , Salfi , J , Oiwa , A , Muhonen , J T , Verhagen , E , LaHaye , M D , Kim , H H , Tsen , A W , Culcer , D , Geresdi , A , Mol , J A , Mohan , V , Jain , P K & Baugh , J 2021 , ' R, Numero 32/16, 2021, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/abb333

Estimation of Convex Polytopes for Automatic Discovery of Charge State Transitions in Quantum Dot Arrays

Autori: Oswin Krause; Bertram Brovang; Torbjørn Rasmussen; Anasua Chatterjee; Ferdinand Kuemmeth
Pubblicato in: Electronics, Numero 4, 2022, ISSN 2079-9292
Editore: MDPI
DOI: 10.3390/electronics11152327

Parametric Amplifiers Based on Quantum Dots

Autori: Laurence Cochrane; Theodor Lundberg; David J. Ibberson; Lisa A. Ibberson; Louis Hutin; Benoit Bertrand; Nadia Stelmashenko; Jason W. A. Robinson; Maud Vinet; Ashwin A. Seshia; M. Fernando Gonzalez-Zalba
Pubblicato in: Physical Review Letter, Numero 128, 2022, ISSN 1079-7114
Editore: American Physical Society
DOI: 10.1103/physrevlett.128.197701

Fast high-fidelity single-shot readout of spins in silicon using a single-electron box

Autori: G. A. Oakes; V. N. Ciriano-Tejel; D. F. Wise; M. A. Fogarty; T. Lundberg; C. Lainé; S. Schaal; F. Martins; D. J. Ibberson; L. Hutin; B. Bertrand; N. Stelmashenko; J. W. A. Robinson; L. Ibberson; A. Hashim; I. Siddiqi; A. Lee; M. Vinet; C. G. Smith; J. J. L. Morton; M. F. Gonzalez-Zalba
Pubblicato in: Physical Review X, Numero 13:011023, 2023, ISSN 2160-3308
Editore: American Physical Society
DOI: 10.48550/arxiv.2203.06608

A cryo-CMOS chip that integrates silicon quantum dots and multiplexed dispersive readout electronics

Autori: Andrea Ruffino; Tsung-Yeh Yang; John Michniewicz; Yatao Peng; Edoardo Charbon; Miguel Fernando Gonzalez-Zalba
Pubblicato in: Nature Electronics, Numero 5, 2022, Pagina/e 53-59, ISSN 2520-1131
Editore: Springer Nature
DOI: 10.1038/s41928-021-00687-6

Semiconductor qubits in practice

Autori: Anasua Chatterjee, Paul Stevenson, Silvano De Franceschi, Andrea Morello, Nathalie P. de Leon, Ferdinand Kuemmeth
Pubblicato in: Nature Reviews Physics, Numero 3/3, 2021, Pagina/e 157-177, ISSN 2522-5820
Editore: Nature
DOI: 10.1038/s42254-021-00283-9

RF simulation platform of qubit control using FDSOI technology for quantum computing

Autori: H. Jacquinot, R. Maurand, G.T. Fernández-Bada, B. Bertrand, M. Cassé, Y.M. Niquet, S. de Franceschi, T. Meunier, M. Vinet
Pubblicato in: Solid-State Electronics, Numero Volume 199, 2023, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108488

Single-electron operations in a foundry-fabricated array of quantum dots

Autori: Fabio Ansaloni, Anasua Chatterjee, Heorhii Bohuslavskyi, Benoit Bertrand, Louis Hutin, Maud Vinet, Ferdinand Kuemmeth
Pubblicato in: Nature Communications, Numero 11/1, 2020, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-020-20280-3

Scaling silicon-based quantum computing using CMOS technology

Autori: M. F. Gonzalez-Zalba, S. de Franceschi, E. Charbon, T. Meunier, M. Vinet & A. S. Dzurak
Pubblicato in: Nature Electronics, Numero 4, 2021, Pagina/e 872-884, ISSN 2520-1131
Editore: Springer Nature
DOI: 10.1038/s41928-021-00681-y

High-fidelity CNOT gate for spin qubits with asymmetric driving using virtual gates

Autori: Irina Heinz; Guido Burkard
Pubblicato in: Physical Review B, Numero 105, 2022, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.105.l121402

Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device

Autori: Cedric Corley-Wiciak; Carsten Richter; Marvin H. Zoellner; Ignatii Zaitsev; Costanza L. Manganelli; Edoardo Zatterin; Tobias U. Schülli; Agnieszka A. Corley-Wiciak; Jens Katzer; Felix Reichmann; Wolfgang M. Klesse; Nico W. Hendrickx; Amir Sammak; Menno Veldhorst; Giordano Scappucci; Michele Virgilio; Giovanni Capellini
Pubblicato in: ACS Applied Materials & Interfaces, Numero 15, 2023, Pagina/e 3119-3130, ISSN 1944-8244
Editore: American Chemical Society
DOI: 10.1021/acsami.2c17395

Low dephasing and robust micromagnet designs for silicon spin qubits

Autori: N. I. Dumoulin Stuyck; Fahd A. Mohiyaddin; R. Li; Marc Heyns; Bogdan Govoreanu; Iuliana Radu
Pubblicato in: Applied Physics Letters, Numero 119, 2021, ISSN 1077-3118
Editore: AIP
DOI: 10.1063/5.0059939

Crosstalk analysis for simultaneously driven two-qubit gates in spin qubit arrays

Autori: Irina Heinz; Guido Burkard
Pubblicato in: Physical Review B, Numero 105, 2022, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.105.085414

Fabrication of gate electrodes for scalable quantum computing using CMOS industry compatible e-beam lithography and numerical simulation of the resulting quantum device

Autori: Varvara Brackmann, Malte Neul, Michael Friedrich, Wolfram Langheinrich, Maik Simon, Pascal Muster, Sebastian Pregl, Arne Demmler, Norbert Hanisch, Maximilian Lederer, Katrin Zimmermann, Jan Klos, Felix Reichmann, Yuji Yamamoto, Marcus Wislicenus, Claus Dahl, Lars R. Schreiber, Hendrik Bluhm, Benjamin Lilienthal-Uhlig
Pubblicato in: 38th European Mask and Lithography Conference (EMLC 2023), Numero Proceedings Volume 12802, 2023, Pagina/e 128020E, ISBN 9781510668607
Editore: SPIE
DOI: 10.1117/12.2675943

A new FDSOI spin qubit platform with 40nm effective control pitch

Autori: T. Bédécarrats, B. Cardoso Paz, B. Martinez Diaz, H. Niebojewski, B. Bertrand, N. Rambal, C. Comboroure, A. Sarrazin, F. Boulard, E. Guyez, J.-M. Hartmann, Y. Morand, A. Magalhaes-Lucas, E. Nowak, E. Catapano, M. Cassé, M. Urdampilleta, Y.-M. Niquet, F. Gaillard, S. De Franceschi, T. Meunier, M. Vinet
Pubblicato in: 2021 IEEE International Electron Devices Meeting (IEDM), 2021, ISBN 978-1-6654-2572-8
Editore: IEEE
DOI: 10.1109/iedm19574.2021.9720497

Linking Room- and Low-Temperature Electrical Performance of MOS Gate Stacks for Cryogenic Applications

Autori: Kao, KH; Godfrin, C; Elsayed, A ; Li, R; Simoen, E; Grill, A; Kubicek, S; Radu, IP; Govoreanu, B
Pubblicato in: IEEE Electron Device Letters, Numero 15580563, 2022, Pagina/e 674-677, ISSN 1558-0563
Editore: IEEE
DOI: 10.1109/led.2022.3162368

Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture

Autori: F.A. Mohiyaddin, R. Li, S. Brebels, G. Simion, N. I. Dumoulin Stuyck, C. Godfrin, M. Shehata, A. Elsayed, B. Gys, S. Kubicek, J. Jussot, Y. Canvel, S. Massar, P. Weckx, P. Matagne, M. Mongillo, B. Govoreanu & I. P. Radu
Pubblicato in: 2021 IEEE International Electron Devices Meeting (IEDM), 2021, ISBN 978-1-6654-2572-8
Editore: IEEE
DOI: 10.1109/iedm19574.2021.9720606

Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology

Autori: B. Cardoso Paz, V. El-Homsy, D. J. Niegemann, B. Klemt, E. Chanrion, V. Thiney, B. Jadot, P. A. Mortemousque, B. Bertrand, T. Bédécarrats, H. Niebojewski, F. Perruchot, S. De Franceschi, M. Vinet, M. Urdampilleta and T. Meunier
Pubblicato in: ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), 2022, ISBN 9781665484954
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/esscirc55480.2022.9911381

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