Periodic Reporting for period 1 - MNEMOSYNE (Magnetic non-volatile Random Access Memory for SPACE with Serial interface)
Berichtszeitraum: 2020-01-01 bis 2021-06-30
The Program Memory is used for permanently storing a program which will be executed, for example as a MCU boot memory or FPGA configuration non-volatile memory (NVM). In space applications, the program memory is the memory which requires the highest reliability, zero error tolerance, and the highest radiation hardness as it is directly related to the system power up. On the other side, as the requirements of system performance became higher and higher, integrated circuits (IC) are more and more dense. Currently, for this critical memory, there is no European radiation hardened memory component available.
non-dependence obviously becomes a key objective of the European Space Strategy while EU satellite industry is struggling against US, Russians and Chinese players.
Therefore, the MNEMOSYNE project coordinated by 3D PLUS has the ambition to develop the first EU independent radiation-hardened high density non-volatile memory (NVM), by using Magnetic RAM (MRAM) technology and the expertise of 6 key partners specialized in radiation hardening and performant components for space and aerospace applications.
non-dependence obviously becomes a key objective of the European Space Strategy while EU satellite industry is struggling against US, Russians and Chinese players.
Therefore, the MNEMOSYNE project coordinated by 3D PLUS has the ambition to develop the first EU independent radiation-hardened high density non-volatile memory (NVM), by using Magnetic RAM (MRAM) technology and the expertise of 6 key partners specialized in radiation hardening and performant components for space and aerospace applications.
The project has been divided into 2 main stages: the test vehicle and the prototype. The TV is a first chip whose purpose is mainly to test the radiation resistance of the IP MRAM of Global foundries. The prototype is the final chip containing the IP MRAM and all the protection mechanisms against the effects of radiation.
Since the beginning of the project, the tasks carried out are essentially focused on the test vehicle, namely, its specification as well as the technical development for its realization.
The test vehicle is a mixed ASIC which contains two blocks, one digital and one analog. These two parts were each specified and developed.
The development of the digital part consists of coding, simulation and verification on an FPGA based emulation board.
The tasks of the definition and the manufacture of this emulation board have been entirely realized. The coding, simulations and verification on board have also been fully realized.
The development of the analog part consists in the design of several analog IPs (oscillator, IO and power management unit-PMU). All these IPs have been designed and simulated. A large implementation phase of all the analog and digital blocks was then done.
Today the test vehicle is ready to be launched in manufacturing at Global Fonderie. Tape-out is scheduled for November 8th.
Since the beginning of the project, the tasks carried out are essentially focused on the test vehicle, namely, its specification as well as the technical development for its realization.
The test vehicle is a mixed ASIC which contains two blocks, one digital and one analog. These two parts were each specified and developed.
The development of the digital part consists of coding, simulation and verification on an FPGA based emulation board.
The tasks of the definition and the manufacture of this emulation board have been entirely realized. The coding, simulations and verification on board have also been fully realized.
The development of the analog part consists in the design of several analog IPs (oscillator, IO and power management unit-PMU). All these IPs have been designed and simulated. A large implementation phase of all the analog and digital blocks was then done.
Today the test vehicle is ready to be launched in manufacturing at Global Fonderie. Tape-out is scheduled for November 8th.
The mastery of Global Foundries' 22nm technology as well as the development of a set of IPs such as 1.8V and 3.3V IOs are the main advances over the state of the art, so far on the project.
Eventually, the MNEMOSYNE project aims to develop (design and prototype) the next generation of high density radiation resistant NVM with serial interface based on the most advanced and mature 22nm FDSOI Magnetic RAM (MRAM) technology available on the European market.
Thanks to the FDSOI semiconductor structure, this process naturally offers good radiation tolerance. In addition, MRAM technology is naturally immune to SEU. The main innovations are as follows:
- The first European space NVM RHBD (radiation hardened by design) with a density of more than 1Mb ;
- The world's first RHBD (radiation hardened by design) space NVM with a density greater than 16MB;
- The first European high-performance RHBD space NVM IP core embedded on a sub-65nm process;
- The first next-generation spin transfer torque (STT) MRAM for space application;
- The first RHBD applied on 22nm FDSOI on digital and analog IPs for TID & SEE attenuation;
The development of high density MRAM will reshape the entire memory chip market for the space industry and beyond.
Eventually, the MNEMOSYNE project aims to develop (design and prototype) the next generation of high density radiation resistant NVM with serial interface based on the most advanced and mature 22nm FDSOI Magnetic RAM (MRAM) technology available on the European market.
Thanks to the FDSOI semiconductor structure, this process naturally offers good radiation tolerance. In addition, MRAM technology is naturally immune to SEU. The main innovations are as follows:
- The first European space NVM RHBD (radiation hardened by design) with a density of more than 1Mb ;
- The world's first RHBD (radiation hardened by design) space NVM with a density greater than 16MB;
- The first European high-performance RHBD space NVM IP core embedded on a sub-65nm process;
- The first next-generation spin transfer torque (STT) MRAM for space application;
- The first RHBD applied on 22nm FDSOI on digital and analog IPs for TID & SEE attenuation;
The development of high density MRAM will reshape the entire memory chip market for the space industry and beyond.