Nanoscale solid-state spin systems in emerging quantum technologies

Risultati finali

Report on entanglement between two distant SiV-qubits
Report on NMR imaging using highly sensitive NV detectors
Report on theory for spin-orbit interaction and valley physics in Si/Ge nanostructures

Report on theory for spinorbit interaction and valley physics in SiGe nanostructures

Report on realization of entanglement of 3 quantum network nodes using spin impurities in diamond
Report on efficient circularly polarized photon generation in TMDC layers in tunable microcavities
Dissemination/Outreach activities report 2

Dissemination/Outreach activities report 2 The report will contain the results of the following activities in months 25-48: · Participation in the most significant international conferences · Publications in high impact research journals · Creation of network-specific outreach material including newsletters · Participation in outreach activities at all nodes · Participation in science exhibition(s) open to general public

Report on quantum memory lifetime >1ms under full network activity using NV impurities in diamond
Report on resonant optical electron spin manipulation in TMDC monolayers and hetersotructures
Report on scalable coupling qubit architecture in SiGe-based devices
Report on theory of spin and valley resonance in TMDC layers
Report of efficient photon extraction from individual spin impurities in diamond using tunable microcavities
Report on two-qubit gates in Si-Ge nano-structures

Report on twoqubit gates in SiGe nanostructures

Report on spin qubits in gate-tunable bilayer graphene/BN nano-structures

Report on progress towards spin qubits in gate-tunable bilayer graphene/BN nano-structures

Report on a theoretical model for optical manipulation of spins in SiV centres in diamond
Report on progress towards spin-photon interface for TMDC quantum dots
Dissemination/Outreach activities report 1

Dissemination/Outreach activities report 1 The report will contain the results of the following activities in months 1-24: · Participation in the most significant international conferences · Publications in high impact research journals · Creation of network-specific outreach material including newsletters · Participation in outreach activities at all nodes · Participation in science exhibition(s) open to general public

Supervisory Board of the network

Launch of the network’s web-site

Pubblicazioni

Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides

Autori: Fabian Cadiz, Cedric Robert, Gang Wang, Wilson Kong, Xi Fan, Mark Blei, Delphine Lagarde, Maxime Gay, Marco Manca, Takashi Taniguchi, Kenji Watanabe, Thierry Amand, Xavier Marie, Pierre Renucci, Sefaattin Tongay, Bernhard Urbaszek
Pubblicato in: 2D Materials, Numero 3/4, 2016, Pagina/e 045008, ISSN 2053-1583
Editore: 2D Materials
DOI: 10.1088/2053-1583/3/4/045008

Enabling valley selective exciton scattering in monolayer WSe2 through upconversion

Autori: M. Manca, M. M. Glazov, C. Robert, F. Cadiz, T. Taniguchi, K. Watanabe, E. Courtade, T. Amand, P. Renucci, X. Marie, G. Wang, B. Urbaszek
Pubblicato in: Nature Communications, Numero 8, 2017, Pagina/e 14927, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/ncomms14927

Excitonic Linewidth Approaching the Homogeneous Limit in MoS 2 -Based van der Waals Heterostructures

Autori: F. Cadiz, E. Courtade, C. Robert, G. Wang, Y. Shen, H. Cai, T. Taniguchi, K. Watanabe, H. Carrere, D. Lagarde, M. Manca, T. Amand, P. Renucci, S. Tongay, X. Marie, B. Urbaszek
Pubblicato in: Physical Review X, Numero 7/2, 2017, ISSN 2160-3308
Editore: American Physical Society
DOI: 10.1103/physrevx.7.021026

Imaging of Interlayer Coupling in van der Waals Heterostructures Using a Bright-Field Optical Microscope

Autori: Evgeny M. Alexeev, Alessandro Catanzaro, Oleksandr V. Skrypka, Pramoda K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Kostya S. Novoselov, Hyeon Suk Shin, Alexander I. Tartakovskii
Pubblicato in: Nano Letters, Numero 17/9, 2017, Pagina/e 5342-5349, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.7b01763

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Autori: Hui Cai, Bin Chen, Gang Wang, Emmanuel Soignard, Afsaneh Khosravi, Marco Manca, Xavier Marie, Shery L. Y. Chang, Bernhard Urbaszek, Sefaattin Tongay
Pubblicato in: Advanced Materials, Numero 29/8, 2017, Pagina/e 1605551, ISSN 0935-9648
Editore: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201605551

Charged excitons in monolayer WSe 2 : Experiment and theory

Autori: E. Courtade, M. Semina, M. Manca, M. M. Glazov, C. Robert, F. Cadiz, G. Wang, T. Taniguchi, K. Watanabe, M. Pierre, W. Escoffier, E. L. Ivchenko, P. Renucci, X. Marie, T. Amand, B. Urbaszek
Pubblicato in: Physical Review B, Numero 96/8, 2017, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.96.085302

Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers

Autori: C. Robert, T. Amand, F. Cadiz, D. Lagarde, E. Courtade, M. Manca, T. Taniguchi, K. Watanabe, B. Urbaszek, X. Marie
Pubblicato in: Physical Review B, Numero 96/15, 2017, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.96.155423

Spin-degenerate regimes for single quantum dots in transition metal dichalcogenide monolayers

Autori: Matthew Brooks, Guido Burkard
Pubblicato in: Physical Review B, Numero 95/24, 2017, ISSN 2469-9950
Editore: American Pysical Society
DOI: 10.1103/PhysRevB.95.245411

Three-dimensional fractional topological insulators in coupled Rashba layers

Autori: Yanick Volpez, Daniel Loss, Jelena Klinovaja
Pubblicato in: Physical Review B, Numero 96/8, 2017, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/PhysRevB.96.085422

Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS 2 van der Waals Heterostructures

Autori: Riccardo Pisoni, Yongjin Lee, Hiske Overweg, Marius Eich, Pauline Simonet, Kenji Watanabe, Takashi Taniguchi, Roman Gorbachev, Thomas Ihn, Klaus Ensslin
Pubblicato in: Nano Letters, Numero 17/8, 2017, Pagina/e 5008-5011, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.7b02186

A programmable two-qubit quantum processor in silicon

Autori: T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen
Pubblicato in: Nature, 2018, ISSN 0028-0836
Editore: Nature Publishing Group
DOI: 10.1038/nature25766

Realization of an Electrically Tunable Narrow-Bandwidth Atomically Thin Mirror Using Monolayer MoSe 2

Autori: Patrick Back, Sina Zeytinoglu, Aroosa Ijaz, Martin Kroner, Atac Imamoğlu
Pubblicato in: Physical Review Letters, Numero 120/3, 2018, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/physrevlett.120.037401

Large-scale quantum-emitter arrays in atomically thin semiconductors

Autori: Carmen Palacios-Berraquero, Dhiren M. Kara, Alejandro R.-P. Montblanch, Matteo Barbone, Pawel Latawiec, Duhee Yoon, Anna K. Ott, Marko Loncar, Andrea C. Ferrari, Mete Atatüre
Pubblicato in: Nature Communications, Numero 8, 2017, Pagina/e 15093, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/ncomms15093

Anomalous Coulomb drag between bilayer graphene and a GaAs electron gas

Autori: Pauline Simonet, Szymon Hennel, Hiske Overweg, Richard Steinacher, Marius Eich, Riccardo Pisoni, Yongjin Lee, Peter Märki, Thomas Ihn, Klaus Ensslin, Mattias Beck, Jérôme Faist
Pubblicato in: New Journal of Physics, Numero 19/10, 2017, Pagina/e 103042, ISSN 1367-2630
Editore: Institute of Physics Publishing
DOI: 10.1088/1367-2630/aa887e

Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

Autori: M. Manca, G. Wang, T. Kuroda, S. Shree, A. Balocchi, P. Renucci, X. Marie, M. V. Durnev, M. M. Glazov, K. Sakoda, T. Mano, T. Amand, B. Urbaszek
Pubblicato in: Applied Physics Letters, Numero 112/14, 2018, Pagina/e 142103, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5024619

Edge channel confinement in a bilayer graphene n–p–n quantum dot

Autori: Hiske Overweg, Peter Rickhaus, Marius Eich, Yongjin Lee, Riccardo Pisoni, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin
Pubblicato in: New Journal of Physics, Numero 20/1, 2018, Pagina/e 013013, ISSN 1367-2630
Editore: Institute of Physics Publishing
DOI: 10.1088/1367-2630/aa9cd3

Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

Autori: Riccardo Pisoni, Zijin Lei, Patrick Back, Marius Eich, Hiske Overweg, Yongjin Lee, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin
Pubblicato in: Applied Physics Letters, Numero 112/12, 2018, Pagina/e 123101, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5021113

Spin and Valley States in Gate-Defined Bilayer Graphene Quantum Dots

Autori: Marius Eich, Riccardo Pisoni, Hiske Overweg, Annika Kurzmann, Yongjin Lee, Peter Rickhaus, Thomas Ihn, Klaus Ensslin, František Herman, Manfred Sigrist, Kenji Watanabe, Takashi Taniguchi
Pubblicato in: Physical Review X, Numero 8/3, 2018, ISSN 2160-3308
Editore: American Physical Society
DOI: 10.1103/physrevx.8.031023

Theory of strain-induced confinement in transition metal dichalcogenide monolayers

Autori: Matthew Brooks, Guido Burkard
Pubblicato in: Physical Review B, Numero 97/19, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.97.195454

Rashba sandwiches with topological superconducting phases

Autori: Yanick Volpez, Daniel Loss, Jelena Klinovaja
Pubblicato in: Physical Review B, Numero 97/19, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.97.195421

Optical spectroscopy of excited exciton states in MoS 2 monolayers in van der Waals heterostructures

Autori: C. Robert, M. A. Semina, F. Cadiz, M. Manca, E. Courtade, T. Taniguchi, K. Watanabe, H. Cai, S. Tongay, B. Lassagne, P. Renucci, T. Amand, X. Marie, M. M. Glazov, B. Urbaszek
Pubblicato in: Physical Review Materials, Numero 2/1, 2018, ISSN 2475-9953
Editore: American Physical Society
DOI: 10.1103/physrevmaterials.2.011001

Observation of exciton-phonon coupling in MoSe 2 monolayers

Autori: S. Shree, M. Semina, C. Robert, B. Han, T. Amand, A. Balocchi, M. Manca, E. Courtade, X. Marie, T. Taniguchi, K. Watanabe, M. M. Glazov, B. Urbaszek
Pubblicato in: Physical Review B, Numero 98/3, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.98.035302

Exciton diffusion in WSe 2 monolayers embedded in a van der Waals heterostructure

Autori: F. Cadiz, C. Robert, E. Courtade, M. Manca, L. Martinelli, T. Taniguchi, K. Watanabe, T. Amand, A. C. H. Rowe, D. Paget, B. Urbaszek, X. Marie
Pubblicato in: Applied Physics Letters, Numero 112/15, 2018, Pagina/e 152106, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5026478

Exciton States in Monolayer MoSe 2 and MoTe

Autori: B. Han, C. Robert, E. Courtade, M. Manca, S. Shree, T. Amand, P. Renucci, T. Taniguchi, K. Watanabe, X. Marie, L. E. Golub, M. M. Glazov, B. Urbaszek
Pubblicato in: Physical Review X, Numero 8/3, 2018, ISSN 2160-3308
Editore: American Physical Society
DOI: 10.1103/physrevx.8.031073

Valley coherent exciton-polaritons in a monolayer semiconductor

Autori: S. Dufferwiel, T. P. Lyons, D. D. Solnyshkov, A. A. P. Trichet, A. Catanzaro, F. Withers, G. Malpuech, J. M. Smith, K. S. Novoselov, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii
Pubblicato in: Nature Communications, Numero 9/1, 2018, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-018-07249-z

Charge-tuneable biexciton complexes in monolayer WSe2

Autori: Matteo Barbone, Alejandro R.-P. Montblanch, Dhiren M. Kara, Carmen Palacios-Berraquero, Alisson R. Cadore, Domenico De Fazio, Benjamin Pingault, Elaheh Mostaani, Han Li, Bin Chen, Kenji Watanabe, Takashi Taniguchi, Sefaattin Tongay, Gang Wang, Andrea C. Ferrari, Mete Atatüre
Pubblicato in: Nature Communications, Numero 9/1, 2018, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-018-05632-4

The valley Zeeman effect in inter- and intra-valley trions in monolayer WSe2

Autori: T. P. Lyons, S. Dufferwiel, M. Brooks, F. Withers, T. Taniguchi, K. Watanabe, K. S. Novoselov, G. Burkard, A. I. Tartakovskii
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-019-10228-7

Second-Order Topological Superconductivity in π -Junction Rashba Layers

Autori: Yanick Volpez, Daniel Loss, Jelena Klinovaja
Pubblicato in: Physical Review Letters, Numero 122/12, 2019, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/physrevlett.122.126402

Comparative study of dielectric coating materials for micro-cavity applications

Autori: Najwa Sidqi, Caspar Clark, Gerald S. Buller, Gopala Krishna V. V. Thalluri, Jevgenij Mitrofanov, Yoann Noblet
Pubblicato in: Optical Materials Express, Numero 9/8, 2019, Pagina/e 3452, ISSN 2159-3930
Editore: Optical Society of America
DOI: 10.1364/ome.9.003452

Optomechanical Measurement of Thermal Transport in Two-Dimensional MoSe 2 Lattices

Autori: Nicolas Morell, Slaven Tepsic, Antoine Reserbat-Plantey, Andrea Cepellotti, Marco Manca, Itai Epstein, Andreas Isacsson, Xavier Marie, Francesco Mauri, Adrian Bachtold
Pubblicato in: Nano Letters, Numero 19/5, 2019, Pagina/e 3143-3150, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b00560

Absence of Interlayer Tunnel Coupling of K -Valley Electrons in Bilayer MoS 2

Autori: Riccardo Pisoni, Tim Davatz, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin
Pubblicato in: Physical Review Letters, Numero 123/11, 2019, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/PhysRevLett.123.117702

Interactions and Magnetotransport through Spin-Valley Coupled Landau Levels in Monolayer MoS 2

Autori: Riccardo Pisoni, Andor Kormányos, Matthew Brooks, Zijin Lei, Patrick Back, Marius Eich, Hiske Overweg, Yongjin Lee, Peter Rickhaus, Kenji Watanabe, Takashi Taniguchi, Atac Imamoglu, Guido Burkard, Thomas Ihn, Klaus Ensslin
Pubblicato in: Physical Review Letters, Numero 121/24, 2018, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/PhysRevLett.121.247701

Enhanced light-matter interaction in an atomically thin semiconductor coupled with dielectric nano-antennas

Autori: L. Sortino, P. G. Zotev, S. Mignuzzi, J. Cambiasso, D. Schmidt, A. Genco, M. Aßmann, M. Bayer, S. A. Maier, R. Sapienza, A. I. Tartakovskii
Pubblicato in: Nature Communications, Numero 10/1, 2019, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-019-12963-3

Cavity-Enhanced Raman Scattering for In Situ Alignment and Characterization of Solid-State Microcavities

Autori: Daniel Riedel, Sigurd Flågan, Patrick Maletinsky, Richard J. Warburton
Pubblicato in: Physical Review Applied, Numero 13/1, 2020, ISSN 2331-7019
Editore: Physical Review Applied
DOI: 10.1103/physrevapplied.13.014036

Excited States in Bilayer Graphene Quantum Dots

Autori: A. Kurzmann, M. Eich, H. Overweg, M. Mangold, F. Herman, P. Rickhaus, R. Pisoni, Y. Lee, R. Garreis, C. Tong, K. Watanabe, T. Taniguchi, K. Ensslin, T. Ihn
Pubblicato in: Physical Review Letters, Numero 123/2, 2019, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/physrevlett.123.026803

Electric dipole spin resonance of two-dimensional semiconductor spin qubits

Autori: Matthew Brooks, Guido Burkard
Pubblicato in: Physical Review B, Numero 101/3, 2020, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.101.035204

Coupled Quantum Dots in Bilayer Graphene

Autori: Marius Eich, Riccardo Pisoni, Alessia Pally, Hiske Overweg, Annika Kurzmann, Yongjin Lee, Peter Rickhaus, Kenji Watanabe, Takashi Taniguchi, Klaus Ensslin, Thomas Ihn
Pubblicato in: Nano Letters, Numero 18/8, 2018, Pagina/e 5042-5048, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.8b01859

Charge Detection in Gate-Defined Bilayer Graphene Quantum Dots

Autori: Annika Kurzmann, Hiske Overweg, Marius Eich, Alessia Pally, Peter Rickhaus, Riccardo Pisoni, Yongjin Lee, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin
Pubblicato in: Nano Letters, Numero 19/8, 2019, Pagina/e 5216-5221, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b01617

Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Autori: Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth
Pubblicato in: Nano Letters, Numero 19/8, 2019, Pagina/e 5628-5633, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.9b02149

Low-dimensional emissive states in non-stoichiometric methylammonium lead halide perovskites

Autori: Benjamin G. Freestone, Joel A. Smith, Giacomo Piana, Rachel C. Kilbride, Andrew J. Parnell, Luca Sortino, David M. Coles, Orianna B. Ball, Natalia Martsinovich, Courtney J. Thompson, Tarek I. Alanazi, Onkar S. Game, Alexander I. Tartakovskii, Pavlos Lagoudakis, David G. Lidzey
Pubblicato in: Journal of Materials Chemistry A, Numero 7/18, 2019, Pagina/e 11104-11116, ISSN 2050-7488
Editore: Royal Society of Chemistry
DOI: 10.1039/c8ta12184b

A link layer protocol for quantum networks

Autori: Axel Dahlberg, Julio de Oliveira Filho, Ronald Hanson, Stephanie Wehner, Matthew Skrzypczyk, Tim Coopmans, Leon Wubben, Filip Rozpędek, Matteo Pompili, Arian Stolk, Przemysław Pawełczak, Robert Knegjens
Pubblicato in: Proceedings of the ACM Special Interest Group on Data Communication - SIGCOMM '19, 2019, Pagina/e 159-173, ISBN 9781-450359566
Editore: ACM Press
DOI: 10.1145/3341302.3342070

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