Single-Hole Pumping in Silicon

Publications

Thermal-Error Regime in High-Accuracy Gigahertz Single-Electron Pumping

Author(s): R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak
Published in: Physical Review Applied, Issue 8/4, 2017, ISSN 2331-7019
Publisher: APS
DOI: 10.1103/physrevapplied.8.044021

Valley splitting of single-electron Si MOS quantum dots

Author(s): John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew D. Baczewski, Erik Nielsen, Leon Maurer, Inès Montaño, Martin Rudolph, M. S. Carroll, C. H. Yang, A. Rossi, A. S. Dzurak, Richard P. Muller
Published in: Applied Physics Letters, Issue 109/25, 2016, Page(s) 253101, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.4972514

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor

Author(s): A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba
Published in: Applied Physics Letters, Issue 110/21, 2017, Page(s) 212101, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.4984224

Radio-frequency capacitive gate-based sensing

Author(s): Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, M. Fernando Gonzalez-Zalba
Published in: 2018
Publisher: Submitted to Physical Review Applied

Gigahertz Single-Electron Pumping Mediated by Parasitic States

Author(s): A. Rossi, J. Klochan, J. Timoshenko, F. E. Hudson, M. Mottonen, S. Rogge, A. S. Dzurak, V. Kashcheyevs, G. C. Tettamanzi
Published in: 2018
Publisher: submitted to Nano Letters

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