Ion-gated Interfaces for Quantum Phase Devices

Pubblicazioni

Extended Polymorphism of Two-Dimensional Material

Autori: Masaro Yoshida, Jianting Ye, Yijin Zhang, Yasuhiko Imai, Shigeru Kimura, Akihiko Fujiwara, Terukazu Nishizaki, Norio Kobayashi, Masaki Nakano, Yoshihiro Iwasa
Pubblicato in: Nano Letters, Numero 17/9, 2017, Pagina/e 5567-5571, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.7b02374

Superconductivity protected by spin–valley locking in ion-gated MoS2

Autori: Yu Saito, Yasuharu Nakamura, Mohammad Saeed Bahramy, Yoshimitsu Kohama, Jianting Ye, Yuichi Kasahara, Yuji Nakagawa, Masaru Onga, Masashi Tokunaga, Tsutomu Nojima, Youichi Yanase, Yoshihiro Iwasa
Pubblicato in: Nature Physics, Numero 12/2, 2016, Pagina/e 144-149, ISSN 1745-2473
Editore: Nature Publishing Group
DOI: 10.1038/nphys3580

High Quality Superconductor-Normal Metal Junction Made on the Surface of MoS 2 Flakes

Autori: Qihong Chen, Lei Liang, Abdurrahman Ali El Yumin, Jianming Lu, Oleksandr Zheliuk, Jianting Ye
Pubblicato in: physica status solidi (b), Numero 254/11, 2017, Pagina/e 1700181, ISSN 0370-1972
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201700181

Planar p - n Junction Based on a TMDs/Boron Nitride Heterostructure

Autori: Abdurrahman Ali El Yumin, Jie Yang, Qihong Chen, Oleksandr Zheliuk, Jianting Ye
Pubblicato in: physica status solidi (b), Numero 254/11, 2017, Pagina/e 1700180, ISSN 0370-1972
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/pssb.201700180

Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

Autori: L. Liang, J. Shan, Q. H. Chen, J. M. Lu, G. R. Blake, T. T. M. Palstra, G. E. W. Bauer, B. J. van Wees, J. T. Ye
Pubblicato in: Physical Review B, Numero 98/13, 2018, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.98.134402

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS 2

Autori: Qihong Chen, Abdurrahman Ali El Yumin, Oleksandr Zheliuk, Puhua Wan, Minpeng Liang, Xiaoli Peng, Jianting Ye
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, Numero 13/12, 2019, Pagina/e 1900333, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201900333

Josephson coupled Ising pairing induced in suspended MoS2 bilayers by double-side ionic gating

Autori: O. Zheliuk, J. M. Lu, Q. H. Chen, A. A. El Yumin, S. Golightly, J. T. Ye
Pubblicato in: Nature Nanotechnology, Numero 14/12, 2019, Pagina/e 1123-1128, ISSN 1748-3387
Editore: Nature Publishing Group
DOI: 10.1038/s41565-019-0564-1

Strong dopant dependence of electric transport in ion-gated MoS 2

Autori: Erik Piatti, Qihong Chen, Jianting Ye
Pubblicato in: Applied Physics Letters, Numero 111/1, 2017, Pagina/e 013106, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.4992477

Inducing and Manipulating Heteroelectronic States in a Single MoS 2 Thin Flake

Autori: Q. H. Chen, J. M. Lu, L. Liang, O. Zheliuk, A. Ali, P. Sheng, J. T. Ye
Pubblicato in: Physical Review Letters, Numero 119/14, 2017, ISSN 0031-9007
Editore: American Physical Society
DOI: 10.1103/PhysRevLett.119.147002

Monolayer Superconductivity in WS 2

Autori: Oleksandr Zheliuk, Jianming Lu, Jie Yang, Jianting Ye
Pubblicato in: physica status solidi (RRL) - Rapid Research Letters, Numero 11/9, 2017, Pagina/e 1700245, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201700245

Role of Defects in Tuning the Electronic Properties of Monolayer WS 2 Grown by Chemical Vapor Deposition

Autori: Jie Yang, Pavlo Gordiichuk, Oleksandr Zheliuk, Jianming Lu, Andreas Herrmann, Jianting Ye
Pubblicato in: physica status solidi (RRL) - Rapid Research Letters, Numero 11/10, 2017, Pagina/e 1700302, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201700302

Full superconducting dome of strong Ising protection in gated monolayer WS 2

Autori: Jianming Lu, Oleksandr Zheliuk, Qihong Chen, Inge Leermakers, Nigel E. Hussey, Uli Zeitler, Jianting Ye
Pubblicato in: Proceedings of the National Academy of Sciences, Numero 115/14, 2018, Pagina/e 3551-3556, ISSN 0027-8424
Editore: National Academy of Sciences
DOI: 10.1073/pnas.1716781115

Continuous Low-Bias Switching of Superconductivity in a MoS 2 Transistor

Autori: Qihong Chen, Jianming Lu, Lei Liang, Oleksandr Zheliuk, Abdurrahman Ali El Yumin, Jianting Ye
Pubblicato in: Advanced Materials, 2018, Pagina/e 1800399, ISSN 0935-9648
Editore: United Nations Industrial Developement Organization
DOI: 10.1002/adma.201800399

Polarized resonant emission of monolayer WS2 coupled with plasmonic sawtooth nanoslit array

Autori: Chunrui Han, Jianting Ye
Pubblicato in: Nature Communications, Numero 11/1, 2020, ISSN 2041-1723
Editore: Nature Publishing Group
DOI: 10.1038/s41467-020-14597-2

Inducing lasing in organic materials with low optical gain by three-dimensional plasmonic nanocavity arrays

Autori: Chunrui Han, Yuejing Qi, Yu Wang, Jianting Ye
Pubblicato in: Optics Express, Numero 27/15, 2019, Pagina/e 20597, ISSN 1094-4087
Editore: Optical Society of America
DOI: 10.1364/oe.27.020597

Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating

Autori: Lei Liang, Qihong Chen, Jianming Lu, Wytse Talsma, Juan Shan, Graeme R. Blake, Thomas T. M. Palstra, Jianting Ye
Pubblicato in: Science Advances, Numero 4/4, 2018, Pagina/e eaar2030, ISSN 2375-2548
Editore: Science
DOI: 10.1126/sciadv.aar2030

Metallic ground state in an ion-gated two-dimensional superconductor

Autori: Y. Saito, Y. Kasahara, J. Ye, Y. Iwasa, T. Nojima
Pubblicato in: Science, Numero 350/6259, 2015, Pagina/e 409-413, ISSN 0036-8075
Editore: American Association for the Advancement of Science
DOI: 10.1126/science.1259440

Evidence for two-dimensional Ising superconductivity in gated MoS2

Autori: J. M. Lu, O. Zheliuk, I. Leermakers, N. F. Q. Yuan, U. Zeitler, K. T. Law, J. T. Ye
Pubblicato in: Science, Numero 350/6266, 2015, Pagina/e 1353-1357, ISSN 0036-8075
Editore: American Association for the Advancement of Science
DOI: 10.1126/science.aab2277

Highly Conductive Metallic State and Strong Spin–Orbit Interaction in Annealed Germanane

Autori: Qihong Chen, Lei Liang, Georgia Potsi, Puhua Wan, Jianming Lu, Theodosis Giousis, Eleni Thomou, Dimitrios Gournis, Petra Rudolf, Jianting Ye
Pubblicato in: Nano Letters, Numero 19/3, 2019, Pagina/e 1520-1526, ISSN 1530-6984
Editore: American Chemical Society
DOI: 10.1021/acs.nanolett.8b04207

Robustly protected carrier spin relaxation in electrostatically doped transition-metal dichalcogenides

Autori: Y. J. Zhang, W. Shi, J. T. Ye, R. Suzuki, Y. Iwasa
Pubblicato in: Physical Review B, Numero 95/20, 2017, ISSN 2469-9950
Editore: American Physical Society
DOI: 10.1103/physrevb.95.205302

Strong anisotropic enhancement of photoluminescence in WS2 integrated with plasmonic nanowire array

Autori: Chunrui Han, Yu Wang, Weihu Zhou, Minpeng Liang, Jianting Ye
Pubblicato in: Scientific Reports, Numero 11/1, 2021, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-021-89136-0

Quantum transport in molybdenum disulfide and germanane transistors

Autori: Chen, Qihong
Pubblicato in: Numero 4, 2017
Editore: Rijksuniversiteit Groningen

2D materials and interfaces in high-carrier density regime: a study on optoelectronics and superconductivity

Autori: Abdurrahman Ali El Yumin
Pubblicato in: 2019
Editore: University of Groningen

Field effect controlled magnetism and magnetotransport in low dimensions

Autori: Liang, Lei
Pubblicato in: Numero 2, 2017
Editore: Rijksuniversiteit Groningen

Magnetotransport of Ising superconductors

Autori: Oleksandr Zheliuk
Pubblicato in: 2020
Editore: University of Groningen

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