Description du projet
Contrôler les transitions quantiques en vue d’une application dans les dispositifs électroniques avancés
Le projet Ig-QPD, financé par le CER, prévoit de créer une interface modulable haute performance pour des dispositifs électroniques innovants en utilisant la commande par effet de champ des transitions de phase quantiques. Ces transitions de phase quantiques correspondent à des changements de l’état fondamental d’un système quantique au zéro absolu en raison de fluctuations quantiques. Ces transitions créent des phases distinctes présentant des propriétés électroniques, magnétiques ou optiques différentes. En combinant de nouveaux films semi-conducteurs en couches, des matériaux ioniques néosynthétisés et des interfaces optimisées, les chercheurs tenteront de révolutionner la manière dont les transistors à effet de champ conventionnels sont élaborés. Cette synergie aura pour effet d’optimiser la commande par effet de champ du dopage des porteurs, permettant ainsi la commutation de phase quantique dans la supraconductivité pour le transport des électrons, le ferromagnétisme pour la magnétisation et les sources de lumière cohérente pour les applications optiques.
Objectif
The aim of this ERC proposal is to develop a highly efficient tunable interface with ion-movement-mediated gating as a rich platform for novel electronic devices by using field effect controlling of quantum phase transitions. Working beyond conventional FETs, the new transistors will be build by combining novel layered semiconductor films grown by the CVD method: newly synthesized ionic material; and a well-defined interface optimized by surface analysis techniques; which jointly are able to boost the field effect control of carrier doping to the range required for switching quantum phases such as superconductivity in electrical transport, ferromagnetism in magnetization, and chiral or coherent light sources in optical applications.
The sub-topics are designed to cover sufficiently broad disciplines of material sciences, new device technologies based on electrochemical principles, and condensed-matter physics. Such a design will make the project high adaptable for success at different levels with clear defined objectives to: 1) develop new materials and material combinations for ion gated interfaces to establish a rich platform of quantum phases; 2) utilize these quantum phases for device functionalities enjoying the characteristic abrupt response in phase transitions and to establish control of magnetism by field effect; and 3) create light emitting devices for effectively correlating light emission with quantum phases.
The project represents an exciting new research field that is attracting the attention of many research groups around the world. The applicant is a well-established pioneer in developing this rapid growing and highly competitive field, where he achieved major milestones in design, fabrication and operation of quantum phase devices. Embedded in the strong material researches environment of the host institute and in his new group, it is the perfect timing for the applicant to fulfil the dream of creating a new paradigm of electronic devices.
Champ scientifique
- engineering and technologynanotechnologynano-materialstwo-dimensional nanostructuresgraphene
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
- natural sciencesphysical scienceselectromagnetism and electronicssuperconductivity
- natural sciencesphysical sciencestheoretical physicsparticle physicsphotons
Programme(s)
Régime de financement
ERC-COG - Consolidator GrantInstitution d’accueil
9712CP Groningen
Pays-Bas